Abstract
In this paper the results of charge and timing resolution characterization realized at Fermi National Accelerator Laboratory (Fermilab) on 3.5 × 3.5 mm2 Silicon PhotoMultipliers fabricated at STMicroelectronics Catania R&D clean room facilities are presented. The device consists of 4900 microcells and has a geometrical fill factor of 36%. Timing measurements were realized at different wavelengths by varying the overvoltage and the temperature applied to the photodetector. The results shown in this manuscript demonstrate that the device, in spite of its large area, exhibits relevant features in terms of low dark current density, fast timing and very good single photoelectron resolution. All these characteristics can be considered very appealing in view of the utilization of this technology in applications requiring detectors with high timing and energy resolution performances.
| Original language | English |
|---|---|
| Article number | 5475316 |
| Pages (from-to) | 2273-2279 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 57 |
| Issue number | 4 PART 2 |
| DOIs | |
| State | Published - Aug 2010 |
| Externally published | Yes |
Keywords
- Dark current
- Geiger mode avalanche diode
- Silicon PhotoMultiplier
- single photoelectron response
- timing resolution
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