Timing performances of large area Silicon PhotoMultipliers fabricated at STMicroelectronics

Massimo Mazzillo, Giovanni Condorelli, Delfo Sanfilippo, Giuseppina Valvo, Beatrice Carbone, Angelo Piana, Giorgio Fallica, Anatoly Ronzhin, Marcel Demarteau, Sergey Los, Erik Ramberg

Research output: Contribution to journalArticlepeer-review

48 Scopus citations

Abstract

In this paper the results of charge and timing resolution characterization realized at Fermi National Accelerator Laboratory (Fermilab) on 3.5 × 3.5 mm2 Silicon PhotoMultipliers fabricated at STMicroelectronics Catania R&D clean room facilities are presented. The device consists of 4900 microcells and has a geometrical fill factor of 36%. Timing measurements were realized at different wavelengths by varying the overvoltage and the temperature applied to the photodetector. The results shown in this manuscript demonstrate that the device, in spite of its large area, exhibits relevant features in terms of low dark current density, fast timing and very good single photoelectron resolution. All these characteristics can be considered very appealing in view of the utilization of this technology in applications requiring detectors with high timing and energy resolution performances.

Original languageEnglish
Article number5475316
Pages (from-to)2273-2279
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number4 PART 2
DOIs
StatePublished - Aug 2010
Externally publishedYes

Keywords

  • Dark current
  • Geiger mode avalanche diode
  • Silicon PhotoMultiplier
  • single photoelectron response
  • timing resolution

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