Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides

Y. F. Chong; H. J.L. Gossmann; M. O. Thompson; S. Yang; K. L. Pey; A. T.S. Wee

doi:10.1063/1.1719267

Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides

Y. F. Chong
, H. J.L. Gossmann
, M. O. Thompson
, S. Yang
, K. L. Pey
, A. T.S. Wee

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon gates on ultrathin gate oxides were investigated. To reduce the gate depletion effect in advanced semiconductor devices, LTP was used. In situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry were used to study the influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si. The results from TRR measurements show the presence of a buried melt for a-Si implanted with B ⁺.

Original language	English
Pages (from-to)	6048-6053
Number of pages	6
Journal	Journal of Applied Physics
Volume	95
Issue number	11 I
DOIs	https://doi.org/10.1063/1.1719267
State	Published - Jun 1 2004
Externally published	Yes

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10.1063/1.1719267

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title = "Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides",

abstract = "The melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon gates on ultrathin gate oxides were investigated. To reduce the gate depletion effect in advanced semiconductor devices, LTP was used. In situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry were used to study the influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si. The results from TRR measurements show the presence of a buried melt for a-Si implanted with B +.",

author = "Chong, \{Y. F.\} and Gossmann, \{H. J.L.\} and Thompson, \{M. O.\} and S. Yang and Pey, \{K. L.\} and Wee, \{A. T.S.\}",

year = "2004",

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doi = "10.1063/1.1719267",

language = "English",

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T1 - Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides

AU - Chong, Y. F.

AU - Gossmann, H. J.L.

AU - Thompson, M. O.

AU - Yang, S.

AU - Pey, K. L.

AU - Wee, A. T.S.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - The melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon gates on ultrathin gate oxides were investigated. To reduce the gate depletion effect in advanced semiconductor devices, LTP was used. In situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry were used to study the influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si. The results from TRR measurements show the presence of a buried melt for a-Si implanted with B +.

AB - The melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon gates on ultrathin gate oxides were investigated. To reduce the gate depletion effect in advanced semiconductor devices, LTP was used. In situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry were used to study the influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si. The results from TRR measurements show the presence of a buried melt for a-Si implanted with B +.

UR - https://www.scopus.com/pages/publications/2942677134

U2 - 10.1063/1.1719267

DO - 10.1063/1.1719267

M3 - Article

AN - SCOPUS:2942677134

SN - 0021-8979

VL - 95

SP - 6048

EP - 6053

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 I

ER -

Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides

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