Time-resolved conductance and reflectance measurements of silicon during pulsed-laser annealing

G. J. Galvin; Michael O. Thompson; J. W. Mayer; P. S. Peercy; R. B. Hammond; N. Paulter

doi:10.1103/PhysRevB.27.1079

Time-resolved conductance and reflectance measurements of silicon during pulsed-laser annealing

G. J. Galvin
, Michael O. Thompson
, J. W. Mayer
, P. S. Peercy
, R. B. Hammond
, N. Paulter

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The dynamics of silicon solidification from the melt during pulsed-ruby-laser annealing have been investigated with the use of time-resolved electrical-conductance and optical-reflectance measurements. Melt duration was found to increase with laser-energy density to over 450 nsec at the highest energy used (3.1 J/cm2). Resolidification velocity was found to vary with time and laser-energy density over a range of 2 to 3 m/sec. The melt threshold was observed to be 0.8 J/cm2. Measurements of the laser energy absorbed in the sample were made to determine energy coupling parameters for use in numerical calculations. The numerical calculations, based on a thermal model for laser melting, are found to be in good agreement with the experimental results.

Original language	English
Pages (from-to)	1079-1087
Number of pages	9
Journal	Physical Review B
Volume	27
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.27.1079
State	Published - 1983
Externally published	Yes

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10.1103/PhysRevB.27.1079

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title = "Time-resolved conductance and reflectance measurements of silicon during pulsed-laser annealing",

abstract = "The dynamics of silicon solidification from the melt during pulsed-ruby-laser annealing have been investigated with the use of time-resolved electrical-conductance and optical-reflectance measurements. Melt duration was found to increase with laser-energy density to over 450 nsec at the highest energy used (3.1 J/cm2). Resolidification velocity was found to vary with time and laser-energy density over a range of 2 to 3 m/sec. The melt threshold was observed to be 0.8 J/cm2. Measurements of the laser energy absorbed in the sample were made to determine energy coupling parameters for use in numerical calculations. The numerical calculations, based on a thermal model for laser melting, are found to be in good agreement with the experimental results.",

author = "Galvin, \{G. J.\} and Thompson, \{Michael O.\} and Mayer, \{J. W.\} and Peercy, \{P. S.\} and Hammond, \{R. B.\} and N. Paulter",

year = "1983",

doi = "10.1103/PhysRevB.27.1079",

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pages = "1079--1087",

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T1 - Time-resolved conductance and reflectance measurements of silicon during pulsed-laser annealing

AU - Galvin, G. J.

AU - Thompson, Michael O.

AU - Mayer, J. W.

AU - Peercy, P. S.

AU - Hammond, R. B.

AU - Paulter, N.

PY - 1983

Y1 - 1983

N2 - The dynamics of silicon solidification from the melt during pulsed-ruby-laser annealing have been investigated with the use of time-resolved electrical-conductance and optical-reflectance measurements. Melt duration was found to increase with laser-energy density to over 450 nsec at the highest energy used (3.1 J/cm2). Resolidification velocity was found to vary with time and laser-energy density over a range of 2 to 3 m/sec. The melt threshold was observed to be 0.8 J/cm2. Measurements of the laser energy absorbed in the sample were made to determine energy coupling parameters for use in numerical calculations. The numerical calculations, based on a thermal model for laser melting, are found to be in good agreement with the experimental results.

AB - The dynamics of silicon solidification from the melt during pulsed-ruby-laser annealing have been investigated with the use of time-resolved electrical-conductance and optical-reflectance measurements. Melt duration was found to increase with laser-energy density to over 450 nsec at the highest energy used (3.1 J/cm2). Resolidification velocity was found to vary with time and laser-energy density over a range of 2 to 3 m/sec. The melt threshold was observed to be 0.8 J/cm2. Measurements of the laser energy absorbed in the sample were made to determine energy coupling parameters for use in numerical calculations. The numerical calculations, based on a thermal model for laser melting, are found to be in good agreement with the experimental results.

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DO - 10.1103/PhysRevB.27.1079

M3 - Article

AN - SCOPUS:4243934766

SN - 0163-1829

VL - 27

SP - 1079

EP - 1087

JO - Physical Review B

JF - Physical Review B

IS - 2

ER -

Time-resolved conductance and reflectance measurements of silicon during pulsed-laser annealing

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