Abstract
Spontaneous tilting of lattice mismatched epilayers grown on (211)-oriented substrates has been observed in numerous systems in literature. Here, we have examined a model system, GaSb/Si(211), with two dimensional X-ray diffraction and conventional transmission electron microscopy, and developed a universal model which explains the origin of the tilt phenomenon as the minimization of projected lattice mismatch for low-index planes across the film/substrate interface. The model developed predicts the tilt for lattice mismatches in the range of 0-20 covering most semiconductor heteroepitaxial systems.
| Original language | English |
|---|---|
| Article number | 132103 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 13 |
| DOIs | |
| State | Published - Apr 1 2013 |
| Externally published | Yes |
Funding
This work was supported by the Ontario Centres of Excellence, ARISE Technologies and the NSERC CREATE PV Program. Electron Microscopy was carried out at the Canadian Centre for Electron Microscopy (CCEM), X-ray was carried out at the McMaster Analytical X-Ray Diffraction Facility (MAX), both facilities are supported by NSERC and McMaster University.