Three-dimensional location of a single dopant with atomic precision by aberration-corrected scanning transmission electron microscopy

Ryo Ishikawa, Andrew R. Lupini, Scott D. Findlay, Takashi Taniguchi, Stephen J. Pennycook

Research output: Contribution to journalArticlepeer-review

85 Scopus citations

Abstract

Materials properties, such as optical and electronic response, can be greatly enhanced by isolated single dopants. Determining the full three-dimensional single-dopant defect structure and spatial distribution is therefore critical to understanding and adequately tuning functional properties. Combining quantitative Z-contrast scanning transmission electron microscopy images with image simulations, we show the direct determination of the atomic-scale depth location of an optically active, single atom Ce dopant embedded within wurtzite-type AlN. The method represents a powerful new tool for reconstructing three-dimensional information from a single, two-dimensional image.

Original languageEnglish
Pages (from-to)1903-1908
Number of pages6
JournalNano Letters
Volume14
Issue number4
DOIs
StatePublished - Apr 9 2014

Funding

FundersFunder number
Japan Society for the Promotion of Science25106006

    Keywords

    • Three-dimensional imaging
    • atomic-resolution ADF STEM
    • photoluminescence
    • single dopant

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