Three-Dimensional Integration of Functional Oxides and Crystalline Silicon for Optical Neuromorphic Computing Using Nanometer-Scale Oxygen Scavenging Barriers

J. Elliott Ortmann, Albina Y. Borisevich, Sunah Kwon, Agham Posadas, Moon J. Kim, Alexander A. Demkov

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Dating to the first reports of epitaxial oxide deposition on Si(001), the integration of complex oxides on silicon has been a fast-moving area of research, where fundamental materials physics is intimately connected to tremendous technological promise in such areas as integrated electronics, optical neuromorphic and quantum computing, and sensing, to name a few. Despite their great promise, devices relying on the co-integration of silicon and epitaxial perovskites are typically limited to basic, planar geometries due to practical issues with their fabrication. In this paper, we overcome these long-standing challenges by developing a method to produce high-quality Si(001)/TMO/Si(001)/TMO heterostructures without wafer bonding, resulting in the straightforward three-dimensional integration of functional complex oxides and active Si(001) layers into a technologically relevant platform that is needed for on-chip hardware implementations of neuromorphic computing based on optical signals. We present detailed structural and chemical characterization of our heterostructures and discuss generalized design rules for their fabrication. Our results exponentially expand the universe of practically achievable TMO-based integrated devices and push this promising class of materials closer to realizing their full technological potential.

Original languageEnglish
Pages (from-to)2153-2159
Number of pages7
JournalACS Applied Nano Materials
Volume4
Issue number2
DOIs
StatePublished - Feb 26 2021

Funding

J.E.O. is grateful for the generous support of the National Science Foundation Graduate Research Fellowship under Grant no. DGE-1610403. The work at UT Austin was supported by the Air Force Office of Scientific Research under Grant nos. FA9550-12-10494 and FA9550-18-1-0053. M.J.K. is supported by the Louis Beecherl, Jr. Endowment Funds, and Global Research and Development Center Program (2018K1A4A3A01064272) and Brain Pool Program (2019H1D3A2A01061938) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT.

Keywords

  • electronics
  • heterostructure
  • molecular beam epitaxy
  • perovskite
  • photonics
  • transition metal oxide

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