Abstract
Aberration correction in scanning transmission electron microscopy has more than doubled the lateral resolution, greatly improving the visibility of individual impurity or dopant atoms. Depth resolution is increased five-fold, to the nanometer level. We show how a through-focal series of images enables single Hf atoms to be located inside an advanced gate dielectric device structure to a precision of better than 0.1 × 0.1 × 0.5 nm. This depth sectioning method for three-dimensional characterization has potential applications to many other fields, including polycrystalline materials, catalysts and biological structures.
Original language | English |
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Pages (from-to) | 1062-1068 |
Number of pages | 7 |
Journal | Ultramicroscopy |
Volume | 106 |
Issue number | 11-12 SPEC. ISS. |
DOIs | |
State | Published - Oct 2006 |
Keywords
- ADF
- Optical slicing
- STEM