TY - GEN
T1 - Threading dislocations in III-V semiconductors
T2 - IEEE International Reliability Physics Symposium, IRPS 2015
AU - Iglesias, V.
AU - Porti, M.
AU - Couso, C.
AU - Wu, Q.
AU - Claramunt, S.
AU - Nafría, M.
AU - Miranda, E.
AU - Domingo, N.
AU - Bersuker, G.
AU - Cordes, A.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/5/26
Y1 - 2015/5/26
N2 - The implementation of devices with high mobility substrates requires growing III-V semiconductors over the underlying silicon substrates. However, due to the lattice mismatch, III-V materials tend to develop a significant density of structural defects, which may affect the device electrical characteristics. In this study, Threading Dislocation (TD) defects, which may propagate through the III-V layers, were studied using Conductive Atomic force Microscopy (CAFM). This technique is shown to be effective for identification and analysis at the nanoscale of the pre- and post-electrically stressed TD. The TD conduction studied at different temperatures (T) is shown to be consistent with the Poole-Frenkel (PF) emission process.
AB - The implementation of devices with high mobility substrates requires growing III-V semiconductors over the underlying silicon substrates. However, due to the lattice mismatch, III-V materials tend to develop a significant density of structural defects, which may affect the device electrical characteristics. In this study, Threading Dislocation (TD) defects, which may propagate through the III-V layers, were studied using Conductive Atomic force Microscopy (CAFM). This technique is shown to be effective for identification and analysis at the nanoscale of the pre- and post-electrically stressed TD. The TD conduction studied at different temperatures (T) is shown to be consistent with the Poole-Frenkel (PF) emission process.
KW - CAFM
KW - Conduction mechanisms
KW - High mobility substrates
KW - III-V semiconductors
KW - Poole-Frenkel emission
KW - Threading dislocations
UR - http://www.scopus.com/inward/record.url?scp=84942864669&partnerID=8YFLogxK
U2 - 10.1109/IRPS.2015.7112788
DO - 10.1109/IRPS.2015.7112788
M3 - Conference contribution
AN - SCOPUS:84942864669
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - CD41-CD46
BT - 2015 IEEE International Reliability Physics Symposium, IRPS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 19 April 2015 through 23 April 2015
ER -