TY - JOUR
T1 - Thickness-independent transport channels in topological insulator Bi 2Se 3 thin films
AU - Bansal, Namrata
AU - Kim, Yong Seung
AU - Brahlek, Matthew
AU - Edrey, Eliav
AU - Oh, Seongshik
PY - 2012/9/12
Y1 - 2012/9/12
N2 - With high quality topological insulator Bi 2Se 3 thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally constant as the sample thickness changed from 256 to ∼8QL (where QL refers to quintuple layer, 1QL1nm). Two surface channels of very different behaviors were identified. The sheet carrier density of one channel remained constant at ∼3.0×1013cm -2 down to 2 QL, while the other, which exhibited quantum oscillations, remained constant at ∼8×1012cm -2 only down to ∼8QL. The weak antilocalization parameters also exhibited similar thickness independence. These two channels are most consistent with the topological surface states and the surface accumulation layers, respectively.
AB - With high quality topological insulator Bi 2Se 3 thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally constant as the sample thickness changed from 256 to ∼8QL (where QL refers to quintuple layer, 1QL1nm). Two surface channels of very different behaviors were identified. The sheet carrier density of one channel remained constant at ∼3.0×1013cm -2 down to 2 QL, while the other, which exhibited quantum oscillations, remained constant at ∼8×1012cm -2 only down to ∼8QL. The weak antilocalization parameters also exhibited similar thickness independence. These two channels are most consistent with the topological surface states and the surface accumulation layers, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84866338461&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.109.116804
DO - 10.1103/PhysRevLett.109.116804
M3 - Article
AN - SCOPUS:84866338461
SN - 0031-9007
VL - 109
JO - Physical Review Letters
JF - Physical Review Letters
IS - 11
M1 - 116804
ER -