Thermoelectric transport and microstructural study of Cu doped Mg2Si0.4Sn0.6

Smita Howlader; Suniksha Gupta; R. Vasudevan; M. K. Banerjee; K. Sachdev

doi:10.1016/j.matpr.2020.04.668

Thermoelectric transport and microstructural study of Cu doped Mg₂Si_0.4Sn_0.6

Smita Howlader, Suniksha Gupta, R. Vasudevan, M. K. Banerjee, K. Sachdev

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The Mg₂X (X = Si and Sn) based alloys which are composed of abundant, non-toxic and inexpensive elements are promising mid-temperature thermoelectric (TE) materials. Herein, we report synthesis of Mg₂Si_0.4Sn_0.6 by high energy ball milling followed by hot pressing for thermoelectric application. The use of Cu as a dopant, appears to provide p-type conductivity but experimentally, the system has been found to generate n-type conduction. The XRD investigations revealed successful attainment of a near to single phase alloy with only minute presence of elemental Si. Electrical conductivity of the order of 10⁴ S/m and charge carrier concentration of the order of 10¹⁹ cm-³ have been obtained through ZEM and Hall coefficient measuring equipment respectively. LFA provides thermal conductivity in the range of 4.4 - 3.0 W/mK. In addition to the thermoelectric measurements, the elemental mapping of the hot-pressed sample has been carefully explored.

Original language	English
Pages (from-to)	100-103
Number of pages	4
Journal	Materials Today: Proceedings
Volume	30
DOIs	https://doi.org/10.1016/j.matpr.2020.04.668
State	Published - 2020
Externally published	Yes
Event	2020 International Conference on Advancement inNanoelectronicsand Communication Technologies, ICANCT 2020 - Jaipur, India Duration: Jan 17 2020 → Jan 18 2020

Funding

The study was supported by a grant from Global Innovation Technology Alliance - Department of Science and Technology [GITA/DST/TWN/P-68/2015], Government of India. We are thankful to Materials Research Centre, MNIT Jaipur for Ball milling, XRD, Sintering Hot Press, Hall measurement equipment and FESEM and National Taiwan University, Taiwan for ZEM and LFA measurements. The research was funded by a project granted from grant from Global Innovation Technology Alliance - Department of Science and Technology [GITA/DST/TWN/P-68/2015], Government of India. MRC, MNIT allowed to use the resources for the research work. Software’s used to plot the data was Origin, FullProf and MS Office.

Keywords

High energy ball milling
MgSiSn Cu doped
Microstrural properies
Thermoelectric properties

Access to Document

10.1016/j.matpr.2020.04.668

Cite this

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title = "Thermoelectric transport and microstructural study of Cu doped Mg2Si0.4Sn0.6",

abstract = "The Mg2X (X = Si and Sn) based alloys which are composed of abundant, non-toxic and inexpensive elements are promising mid-temperature thermoelectric (TE) materials. Herein, we report synthesis of Mg2Si0.4Sn0.6 by high energy ball milling followed by hot pressing for thermoelectric application. The use of Cu as a dopant, appears to provide p-type conductivity but experimentally, the system has been found to generate n-type conduction. The XRD investigations revealed successful attainment of a near to single phase alloy with only minute presence of elemental Si. Electrical conductivity of the order of 104 S/m and charge carrier concentration of the order of 1019 cm-3 have been obtained through ZEM and Hall coefficient measuring equipment respectively. LFA provides thermal conductivity in the range of 4.4 - 3.0 W/mK. In addition to the thermoelectric measurements, the elemental mapping of the hot-pressed sample has been carefully explored.",

keywords = "High energy ball milling, MgSiSn Cu doped, Microstrural properies, Thermoelectric properties",

author = "Smita Howlader and Suniksha Gupta and R. Vasudevan and Banerjee, {M. K.} and K. Sachdev",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of the scientific committee of the International Conference on Advancement in Nanoelectronics and Communication Technologies.; 2020 International Conference on Advancement inNanoelectronicsand Communication Technologies, ICANCT 2020 ; Conference date: 17-01-2020 Through 18-01-2020",

year = "2020",

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AU - Howlader, Smita

AU - Gupta, Suniksha

AU - Vasudevan, R.

AU - Banerjee, M. K.

AU - Sachdev, K.

N1 - Publisher Copyright: © 2020 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of the scientific committee of the International Conference on Advancement in Nanoelectronics and Communication Technologies.

PY - 2020

Y1 - 2020

N2 - The Mg2X (X = Si and Sn) based alloys which are composed of abundant, non-toxic and inexpensive elements are promising mid-temperature thermoelectric (TE) materials. Herein, we report synthesis of Mg2Si0.4Sn0.6 by high energy ball milling followed by hot pressing for thermoelectric application. The use of Cu as a dopant, appears to provide p-type conductivity but experimentally, the system has been found to generate n-type conduction. The XRD investigations revealed successful attainment of a near to single phase alloy with only minute presence of elemental Si. Electrical conductivity of the order of 104 S/m and charge carrier concentration of the order of 1019 cm-3 have been obtained through ZEM and Hall coefficient measuring equipment respectively. LFA provides thermal conductivity in the range of 4.4 - 3.0 W/mK. In addition to the thermoelectric measurements, the elemental mapping of the hot-pressed sample has been carefully explored.

AB - The Mg2X (X = Si and Sn) based alloys which are composed of abundant, non-toxic and inexpensive elements are promising mid-temperature thermoelectric (TE) materials. Herein, we report synthesis of Mg2Si0.4Sn0.6 by high energy ball milling followed by hot pressing for thermoelectric application. The use of Cu as a dopant, appears to provide p-type conductivity but experimentally, the system has been found to generate n-type conduction. The XRD investigations revealed successful attainment of a near to single phase alloy with only minute presence of elemental Si. Electrical conductivity of the order of 104 S/m and charge carrier concentration of the order of 1019 cm-3 have been obtained through ZEM and Hall coefficient measuring equipment respectively. LFA provides thermal conductivity in the range of 4.4 - 3.0 W/mK. In addition to the thermoelectric measurements, the elemental mapping of the hot-pressed sample has been carefully explored.

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