Thermoelectric properties of polycrystalline In4Se3 and In4 Te3

Xun Shi; Jung Y. Cho; James R. Salvador; Jihui Yang; Hsin Wang

doi:10.1063/1.3389494

Thermoelectric properties of polycrystalline In₄Se₃ and In₄ Te₃

Xun Shi, Jung Y. Cho, James R. Salvador, Jihui Yang, Hsin Wang

Nuclear Energy Materials Microanalysis

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68 Scopus citations

Abstract

High thermoelectric performance of a single crystal layered compound In₄ Se₃ was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In₄ Se₃ and In₄ Te₃. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/mK, is observed. The power factors for In₄ Se₃ and In₄ Te₃ are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In₄ Se₃.

Original language	English
Article number	162108
Journal	Applied Physics Letters
Volume	96
Issue number	16
DOIs	https://doi.org/10.1063/1.3389494
State	Published - Apr 19 2010

Funding

X.S., J.R.S., J.Y.C., and J.Y. would like to thank Dr. J. F. Herbst and Dr. M. W. Verbrugge for continuous support and encouragement. This work was supported by GM and by DOE under corporate Agreement No. DE-FC26-04NT42278, by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Transportation Technologies as part of the High Temperature Materials Laboratory User Program at Oak Ridge National Laboratory managed by the UT-Battelle LLC, for the Department of Energy under Contract No. DEAC05000OR22725.

Funders	Funder number
Office of Transportation Technologies
U.S. Department of Energy	DE-FC26-04NT42278, DEAC05000OR22725
Office of Energy Efficiency and Renewable Energy
Oak Ridge National Laboratory
UT-Battelle

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title = "Thermoelectric properties of polycrystalline In4Se3 and In4 Te3",

abstract = "High thermoelectric performance of a single crystal layered compound In4 Se3 was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In4 Se3 and In4 Te3. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/mK, is observed. The power factors for In4 Se3 and In4 Te3 are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In4 Se3.",

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AU - Shi, Xun

AU - Cho, Jung Y.

AU - Salvador, James R.

AU - Yang, Jihui

AU - Wang, Hsin

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AB - High thermoelectric performance of a single crystal layered compound In4 Se3 was reported recently. We present here an electrical and thermal transport property study over a wide temperature range for polycrystalline samples of In4 Se3 and In4 Te3. Our data demonstrate that these materials are lightly doped semiconductors, leading to large thermopower and resistivity. Very low thermal conductivity, below 1 W/mK, is observed. The power factors for In4 Se3 and In4 Te3 are much smaller when compared with state-of-the-art thermoelectric materials. This combined with the very low thermal conductivity results in the maximum ZT value of less than 0.6 at 700 K for In4 Se3.

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ER -

Thermoelectric properties of polycrystalline In₄Se₃ and In₄ Te₃

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