Thermoelectric properties of β-FeSi2

Tribhuwan Pandey, David J. Singh, David Parker, Abhishek K. Singh

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23 Scopus citations

Abstract

We investigate the thermoelectric properties of β-FeSi2 using first principles electronic structure and Boltzmann transport calculations. We report a high thermopower for both p- and n-type β-FeSi2 over a wide range of carrier concentration and in addition find the performance for n-type to be higher than for the p-type. Our results indicate that, depending upon temperature, a doping level of 3 × 1020 to 2 × 1021 cm-3 may optimize the thermoelectric performance.

Original languageEnglish
Article number153704
JournalJournal of Applied Physics
Volume114
Issue number15
DOIs
StatePublished - Oct 21 2013

Funding

T.P. acknowledges the hospitality of the Oak Ridge National Laboratory. Work was funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division (T.P., D.J.S., first principles) and the D.O.E. Energy Efficiency and Renewable Energy, Vehicle Technologies program (D.P., analysis).

FundersFunder number
U.S. Department of Energy
Office of Science
Office of Energy Efficiency and Renewable Energy
Basic Energy Sciences
Division of Materials Sciences and Engineering

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