Abstract
We investigate the thermoelectric properties of β-FeSi2 using first principles electronic structure and Boltzmann transport calculations. We report a high thermopower for both p- and n-type β-FeSi2 over a wide range of carrier concentration and in addition find the performance for n-type to be higher than for the p-type. Our results indicate that, depending upon temperature, a doping level of 3 × 1020 to 2 × 1021 cm-3 may optimize the thermoelectric performance.
Original language | English |
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Article number | 153704 |
Journal | Journal of Applied Physics |
Volume | 114 |
Issue number | 15 |
DOIs | |
State | Published - Oct 21 2013 |
Funding
T.P. acknowledges the hospitality of the Oak Ridge National Laboratory. Work was funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division (T.P., D.J.S., first principles) and the D.O.E. Energy Efficiency and Renewable Energy, Vehicle Technologies program (D.P., analysis).
Funders | Funder number |
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U.S. Department of Energy | |
Office of Science | |
Office of Energy Efficiency and Renewable Energy | |
Basic Energy Sciences | |
Division of Materials Sciences and Engineering |