Thermoelectric performance of electron and hole doped PtSb2

Y. Saeed; N. Singh; D. Parker; U. Schwingenschlögl

doi:10.1063/1.4803145

Thermoelectric performance of electron and hole doped PtSb₂

Y. Saeed, N. Singh, D. Parker, U. Schwingenschlögl

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Abstract

We investigate the thermoelectric properties of electron and hole doped PtSb₂. Our results show that for doping of 0.04 holes per unit cell (1.5 × 10²⁰ cm^-3) PtSb₂ shows a high Seebeck coefficient at room temperature, which can also be achieved at other temperatures by controlling the carrier concentration (both electron and hole). The electrical conductivity becomes temperature independent when the doping exceeds some 0.2 electrons/holes per unit cell. The figure of merit at 800 K in electron and hole doped PtSb₂ is comparatively low at 0.13 and 0.21, respectively, but may increase significantly with As alloying due to the likely opening of a band gap and reduction of the lattice thermal conductivity.

Original language	English
Article number	163706
Journal	Journal of Applied Physics
Volume	113
Issue number	16
DOIs	https://doi.org/10.1063/1.4803145
State	Published - Apr 28 2013

Funding

This research was supported by the Solid State Solar-Thermal Energy Conversion Center (S3 TEC), an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences under Award No. DE-SC0001299/DE-FG02-09ER46577 (DP). Computational resources have been provided by KAUST IT.

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AB - We investigate the thermoelectric properties of electron and hole doped PtSb2. Our results show that for doping of 0.04 holes per unit cell (1.5 × 1020 cm-3) PtSb2 shows a high Seebeck coefficient at room temperature, which can also be achieved at other temperatures by controlling the carrier concentration (both electron and hole). The electrical conductivity becomes temperature independent when the doping exceeds some 0.2 electrons/holes per unit cell. The figure of merit at 800 K in electron and hole doped PtSb2 is comparatively low at 0.13 and 0.21, respectively, but may increase significantly with As alloying due to the likely opening of a band gap and reduction of the lattice thermal conductivity.

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Thermoelectric performance of electron and hole doped PtSb₂

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