Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition

V. G. Varanasi; T. M. Besmann; E. A. Payzant; T. L. Starr; T. J. Anderson

doi:10.1016/j.tsf.2007.11.020

Thermodynamic analysis and growth of ZrO₂ by chloride chemical vapor deposition

V. G. Varanasi, T. M. Besmann, E. A. Payzant, T. L. Starr, T. J. Anderson

Materials Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Equilibrium calculations were used to optimize conditions for the chemical vapor deposition (CVD) of zirconia. The results showed zirconia formation would occur at high oxygen to zirconium atomic ratios (> 4), low hydrogen to carbon ratios (< 10), low pressures (< 105 Pa) and high temperatures (> 800 °C). Using these calculations as a guide, single-phase monoclinic zirconia coatings were deposited onto 2-cm diameter α-alumina substrates. The maximum growth rate achieved was 2.46 mg cm^{- 2} h^{- 1}.

Original language	English
Pages (from-to)	6133-6139
Number of pages	7
Journal	Thin Solid Films
Volume	516
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2007.11.020
State	Published - Jul 31 2008

Keywords

Chemical vapor deposition
Thermodynamic analysis
Zirconia

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10.1016/j.tsf.2007.11.020

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title = "Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition",

abstract = "Equilibrium calculations were used to optimize conditions for the chemical vapor deposition (CVD) of zirconia. The results showed zirconia formation would occur at high oxygen to zirconium atomic ratios (> 4), low hydrogen to carbon ratios (< 10), low pressures (< 105 Pa) and high temperatures (> 800 °C). Using these calculations as a guide, single-phase monoclinic zirconia coatings were deposited onto 2-cm diameter α-alumina substrates. The maximum growth rate achieved was 2.46 mg cm- 2 h- 1.",

keywords = "Chemical vapor deposition, Thermodynamic analysis, Zirconia",

author = "Varanasi, \{V. G.\} and Besmann, \{T. M.\} and Payzant, \{E. A.\} and Starr, \{T. L.\} and Anderson, \{T. J.\}",

year = "2008",

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doi = "10.1016/j.tsf.2007.11.020",

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T1 - Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition

AU - Varanasi, V. G.

AU - Besmann, T. M.

AU - Payzant, E. A.

AU - Starr, T. L.

AU - Anderson, T. J.

PY - 2008/7/31

Y1 - 2008/7/31

N2 - Equilibrium calculations were used to optimize conditions for the chemical vapor deposition (CVD) of zirconia. The results showed zirconia formation would occur at high oxygen to zirconium atomic ratios (> 4), low hydrogen to carbon ratios (< 10), low pressures (< 105 Pa) and high temperatures (> 800 °C). Using these calculations as a guide, single-phase monoclinic zirconia coatings were deposited onto 2-cm diameter α-alumina substrates. The maximum growth rate achieved was 2.46 mg cm- 2 h- 1.

AB - Equilibrium calculations were used to optimize conditions for the chemical vapor deposition (CVD) of zirconia. The results showed zirconia formation would occur at high oxygen to zirconium atomic ratios (> 4), low hydrogen to carbon ratios (< 10), low pressures (< 105 Pa) and high temperatures (> 800 °C). Using these calculations as a guide, single-phase monoclinic zirconia coatings were deposited onto 2-cm diameter α-alumina substrates. The maximum growth rate achieved was 2.46 mg cm- 2 h- 1.

KW - Chemical vapor deposition

KW - Thermodynamic analysis

KW - Zirconia

UR - https://www.scopus.com/pages/publications/44649141881

U2 - 10.1016/j.tsf.2007.11.020

DO - 10.1016/j.tsf.2007.11.020

M3 - Article

AN - SCOPUS:44649141881

SN - 0040-6090

VL - 516

SP - 6133

EP - 6139

JO - Thin Solid Films

JF - Thin Solid Films

IS - 18

ER -

Thermodynamic analysis and growth of ZrO₂ by chloride chemical vapor deposition

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Keywords

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