Abstract
Equilibrium calculations were used to optimize conditions for the chemical vapor deposition (CVD) of zirconia. The results showed zirconia formation would occur at high oxygen to zirconium atomic ratios (> 4), low hydrogen to carbon ratios (< 10), low pressures (< 105 Pa) and high temperatures (> 800 °C). Using these calculations as a guide, single-phase monoclinic zirconia coatings were deposited onto 2-cm diameter α-alumina substrates. The maximum growth rate achieved was 2.46 mg cm- 2 h- 1.
Original language | English |
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Pages (from-to) | 6133-6139 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 516 |
Issue number | 18 |
DOIs | |
State | Published - Jul 31 2008 |
Keywords
- Chemical vapor deposition
- Thermodynamic analysis
- Zirconia