Thermally stable novel metal contacts on bulk, single-Crystal n-type ZnO

J. S. Wright; R. Khanna; L. F. Voss; L. Stafford; B. P. Gila; D. P. Norton; S. J. Pearton; F. Ren; I. Kravchenko

doi:10.1149/1.2731195

Thermally stable novel metal contacts on bulk, single-Crystal n-type ZnO

J. S. Wright, R. Khanna, L. F. Voss, L. Stafford, B. P. Gila, D. P. Norton, S. J. Pearton, F. Ren, I. Kravchenko

Nanofabrication Research Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The contact characteristics on bulk single-crystal n-type ZnO of TiB ₂/Pt/Au, ZrB₂/Pt/Au and Ir/Au metallization schemes deposited by sputtering are reported as a function of annealing temperature in the range 200-1000°C (N2 ambient). Boride contacts exhibited Ohmic behavior with minimum specific contact resistance between 10^-33 and 10 ^-5 Ωcm2 after a 700°C or above anneal. The contacts transition to rectifying behavior after annealing above 900°C, coincident with a degraded surface morphology. Ir contacts exhibit higher thermal stability than both Boride contacts investigated, exhibiting a minimum specific contact resistance of 3.6 × 10^-6 Ωcm2 after annealing at 1000°C. Ir contacts showed very little change in resistance after extended aging (30 days) at 350°C.

Original language	English
Title of host publication	ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
Publisher	Electrochemical Society Inc.
Pages	279-284
Number of pages	6
Edition	2
ISBN (Electronic)	9781566775519
ISBN (Print)	9781566775519
DOIs	https://doi.org/10.1149/1.2731195
State	Published - 2007
Event	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States Duration: May 6 2007 → May 10 2007

Publication series

Name	ECS Transactions
Number	2
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
Country/Territory	United States
City	Chicago, IL
Period	05/6/07 → 05/10/07

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10.1149/1.2731195

Cite this

Wright, J. S., Khanna, R., Voss, L. F., Stafford, L., Gila, B. P., Norton, D. P., Pearton, S. J., Ren, F., & Kravchenko, I. (2007). Thermally stable novel metal contacts on bulk, single-Crystal n-type ZnO. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface (2 ed., pp. 279-284). (ECS Transactions; Vol. 6, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.2731195

Wright, J. S. ; Khanna, R. ; Voss, L. F. et al. / Thermally stable novel metal contacts on bulk, single-Crystal n-type ZnO. ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. Electrochemical Society Inc., 2007. pp. 279-284 (ECS Transactions; 2).

@inproceedings{f8e56373bc3143719bfa3535085426e9,

title = "Thermally stable novel metal contacts on bulk, single-Crystal n-type ZnO",

abstract = "The contact characteristics on bulk single-crystal n-type ZnO of TiB 2/Pt/Au, ZrB2/Pt/Au and Ir/Au metallization schemes deposited by sputtering are reported as a function of annealing temperature in the range 200-1000°C (N2 ambient). Boride contacts exhibited Ohmic behavior with minimum specific contact resistance between 10-33 and 10 -5 Ωcm2 after a 700°C or above anneal. The contacts transition to rectifying behavior after annealing above 900°C, coincident with a degraded surface morphology. Ir contacts exhibit higher thermal stability than both Boride contacts investigated, exhibiting a minimum specific contact resistance of 3.6 × 10-6 Ωcm2 after annealing at 1000°C. Ir contacts showed very little change in resistance after extended aging (30 days) at 350°C.",

author = "Wright, {J. S.} and R. Khanna and Voss, {L. F.} and L. Stafford and Gila, {B. P.} and Norton, {D. P.} and Pearton, {S. J.} and F. Ren and I. Kravchenko",

year = "2007",

doi = "10.1149/1.2731195",

language = "English",

isbn = "9781566775519",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "279--284",

booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",

edition = "2",

note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",

}

Wright, JS, Khanna, R, Voss, LF, Stafford, L, Gila, BP, Norton, DP, Pearton, SJ, Ren, F & Kravchenko, I 2007, Thermally stable novel metal contacts on bulk, single-Crystal n-type ZnO. in ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 edn, ECS Transactions, no. 2, vol. 6, Electrochemical Society Inc., pp. 279-284, 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting, Chicago, IL, United States, 05/6/07. https://doi.org/10.1149/1.2731195

Thermally stable novel metal contacts on bulk, single-Crystal n-type ZnO. / Wright, J. S.; Khanna, R.; Voss, L. F. et al.
ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2. ed. Electrochemical Society Inc., 2007. p. 279-284 (ECS Transactions; Vol. 6, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermally stable novel metal contacts on bulk, single-Crystal n-type ZnO

AU - Wright, J. S.

AU - Khanna, R.

AU - Voss, L. F.

AU - Stafford, L.

AU - Gila, B. P.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I.

PY - 2007

Y1 - 2007

N2 - The contact characteristics on bulk single-crystal n-type ZnO of TiB 2/Pt/Au, ZrB2/Pt/Au and Ir/Au metallization schemes deposited by sputtering are reported as a function of annealing temperature in the range 200-1000°C (N2 ambient). Boride contacts exhibited Ohmic behavior with minimum specific contact resistance between 10-33 and 10 -5 Ωcm2 after a 700°C or above anneal. The contacts transition to rectifying behavior after annealing above 900°C, coincident with a degraded surface morphology. Ir contacts exhibit higher thermal stability than both Boride contacts investigated, exhibiting a minimum specific contact resistance of 3.6 × 10-6 Ωcm2 after annealing at 1000°C. Ir contacts showed very little change in resistance after extended aging (30 days) at 350°C.

AB - The contact characteristics on bulk single-crystal n-type ZnO of TiB 2/Pt/Au, ZrB2/Pt/Au and Ir/Au metallization schemes deposited by sputtering are reported as a function of annealing temperature in the range 200-1000°C (N2 ambient). Boride contacts exhibited Ohmic behavior with minimum specific contact resistance between 10-33 and 10 -5 Ωcm2 after a 700°C or above anneal. The contacts transition to rectifying behavior after annealing above 900°C, coincident with a degraded surface morphology. Ir contacts exhibit higher thermal stability than both Boride contacts investigated, exhibiting a minimum specific contact resistance of 3.6 × 10-6 Ωcm2 after annealing at 1000°C. Ir contacts showed very little change in resistance after extended aging (30 days) at 350°C.

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M3 - Conference contribution

AN - SCOPUS:45749133075

SN - 9781566775519

T3 - ECS Transactions

SP - 279

EP - 284

BT - ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface

PB - Electrochemical Society Inc.

T2 - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting

Y2 - 6 May 2007 through 10 May 2007

ER -

Wright JS, Khanna R, Voss LF, Stafford L, Gila BP, Norton DP et al. Thermally stable novel metal contacts on bulk, single-Crystal n-type ZnO. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 ed. Electrochemical Society Inc. 2007. p. 279-284. (ECS Transactions; 2). doi: 10.1149/1.2731195

Thermally stable novel metal contacts on bulk, single-Crystal n-type ZnO

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