@inproceedings{7f2b1b1cfbca428e8643b784627240c4,
title = "Thermally stable boride Ohmic contacts on n-ZnO",
abstract = "The annealing temperature dependence of contact characteristics on bulk single-crystal n- ZnO using a TiB2/Pt/Au metallization scheme deposited by sputtering are reported. The contacts are rectifying for anneal temperatures < 700°C but transition to Ohmic behavior at higher temperatures and exhibit a minimum specific contact resistivity of 5×10-4 Ω. cm after 800°C anneals. Higher temperatures lead to severe contact metallurgy intermixing and a sharp increase in specific contact resistivity associated with an increase in sheet resistance of the ZnO under the contact. Pt, Ti, Zn and B outdiffuse through the Au layer at 800°C while at higher temperatures the contact morphology is destroyed. These boride-based contacts show much higher thermal stability than previous metal schemes used as Ohmic contacts on ZnO and are promising for high temperature device applications copyright The Electrochemical Society.",
author = "Wright, {J. S.} and R. Khanna and Norton, {D. P.} and Pearton, {S. J.} and F. Ren and I. Kravchenko",
year = "2006",
doi = "10.1149/1.2204889",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "173--179",
booktitle = "State-of-the-Art Program on Compound Semiconductors XLIV",
edition = "5",
note = "State-of-the-Art Program on Compound Semiconductors XLIV 209th Electrochemical Society Meeting ; Conference date: 07-05-2006 Through 12-05-2006",
}