Thermally stable and low resistance Re/Ti/Au ohmic contacts to n-ZnO

Sang Ho Kim; Kyoung Kook Kim; Seong Ju Park; Tae Yeon Seong

doi:10.1149/1.1854591

Thermally stable and low resistance Re/Ti/Au ohmic contacts to n-ZnO

Sang Ho Kim, Kyoung Kook Kim, Seong Ju Park, Tae Yeon Seong

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35 Scopus citations

Abstract

We report on the formation of thermally stable ohmic contacts on n-type ZnO:Al (n_d = 2 × 10¹⁸ cm^-3) using a Re/Ti/Au metallization scheme. It is shown that the as-deposited Re/Ti/Au contact is ohmic with a contact resistivity of 2.1 × 10^-4 Ω cm². The electrical characteristics of the samples are further improved upon annealing, namely, the sample produces a specific contact resistance of 1.7 × 10^-7 Ω cm² when annealed at 700°C for 1 min in a nitrogen ambient. Atomic force microscopy results show that the surface of the samples is reasonably smooth with a root-mean-square roughness of 6.0 nm when annealed at 700°C. The carrier transport mechanism is described using the relationship between temperature and specific contact resistance. Based on X-ray diffraction and X-ray photoemission spectroscopy results, the ohmic mechanism for the annealed samples is also described and discussed.

Original language	English
Pages (from-to)	G169-G172
Journal	Journal of the Electrochemical Society
Volume	152
Issue number	3
DOIs	https://doi.org/10.1149/1.1854591
State	Published - 2005
Externally published	Yes

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title = "Thermally stable and low resistance Re/Ti/Au ohmic contacts to n-ZnO",

abstract = "We report on the formation of thermally stable ohmic contacts on n-type ZnO:Al (nd = 2 × 1018 cm-3) using a Re/Ti/Au metallization scheme. It is shown that the as-deposited Re/Ti/Au contact is ohmic with a contact resistivity of 2.1 × 10-4 Ω cm2. The electrical characteristics of the samples are further improved upon annealing, namely, the sample produces a specific contact resistance of 1.7 × 10-7 Ω cm2 when annealed at 700°C for 1 min in a nitrogen ambient. Atomic force microscopy results show that the surface of the samples is reasonably smooth with a root-mean-square roughness of 6.0 nm when annealed at 700°C. The carrier transport mechanism is described using the relationship between temperature and specific contact resistance. Based on X-ray diffraction and X-ray photoemission spectroscopy results, the ohmic mechanism for the annealed samples is also described and discussed.",

author = "Kim, {Sang Ho} and Kim, {Kyoung Kook} and Park, {Seong Ju} and Seong, {Tae Yeon}",

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doi = "10.1149/1.1854591",

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publisher = "The Electrochemical Society",

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T1 - Thermally stable and low resistance Re/Ti/Au ohmic contacts to n-ZnO

AU - Kim, Sang Ho

AU - Kim, Kyoung Kook

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 2005

Y1 - 2005

N2 - We report on the formation of thermally stable ohmic contacts on n-type ZnO:Al (nd = 2 × 1018 cm-3) using a Re/Ti/Au metallization scheme. It is shown that the as-deposited Re/Ti/Au contact is ohmic with a contact resistivity of 2.1 × 10-4 Ω cm2. The electrical characteristics of the samples are further improved upon annealing, namely, the sample produces a specific contact resistance of 1.7 × 10-7 Ω cm2 when annealed at 700°C for 1 min in a nitrogen ambient. Atomic force microscopy results show that the surface of the samples is reasonably smooth with a root-mean-square roughness of 6.0 nm when annealed at 700°C. The carrier transport mechanism is described using the relationship between temperature and specific contact resistance. Based on X-ray diffraction and X-ray photoemission spectroscopy results, the ohmic mechanism for the annealed samples is also described and discussed.

AB - We report on the formation of thermally stable ohmic contacts on n-type ZnO:Al (nd = 2 × 1018 cm-3) using a Re/Ti/Au metallization scheme. It is shown that the as-deposited Re/Ti/Au contact is ohmic with a contact resistivity of 2.1 × 10-4 Ω cm2. The electrical characteristics of the samples are further improved upon annealing, namely, the sample produces a specific contact resistance of 1.7 × 10-7 Ω cm2 when annealed at 700°C for 1 min in a nitrogen ambient. Atomic force microscopy results show that the surface of the samples is reasonably smooth with a root-mean-square roughness of 6.0 nm when annealed at 700°C. The carrier transport mechanism is described using the relationship between temperature and specific contact resistance. Based on X-ray diffraction and X-ray photoemission spectroscopy results, the ohmic mechanism for the annealed samples is also described and discussed.

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JF - Journal of the Electrochemical Society

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Thermally stable and low resistance Re/Ti/Au ohmic contacts to n-ZnO

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