Thermally induced stress relaxation and densification of spin-on-glass thin films

C. K. Chiang; W. E. Wallace; G. W. Lynn; D. Feiler; W. Xia

doi:10.1063/1.125777

Thermally induced stress relaxation and densification of spin-on-glass thin films

C. K. Chiang, W. E. Wallace, G. W. Lynn, D. Feiler, W. Xia

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The stress-temperature relationship of silica spin-on-glass thin films on silicon wafers was studied. Upon heating, the stress-temperature curves showed a dramatically increasing slope when the temperature of the film was greater than 340°C. At 450°C, a significant, irreversible change in the stress of the film was observed. This change in stress was correlated with an increase in film electron density and a decrease in film thickness. The observed thermally activated stress-relaxation behavior was interpreted in terms of reflow of the glassy hydrogen-silsesquioxane-based material.

Original language	English
Pages (from-to)	430-432
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	4
DOIs	https://doi.org/10.1063/1.125777
State	Published - Jan 24 2000
Externally published	Yes

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title = "Thermally induced stress relaxation and densification of spin-on-glass thin films",

abstract = "The stress-temperature relationship of silica spin-on-glass thin films on silicon wafers was studied. Upon heating, the stress-temperature curves showed a dramatically increasing slope when the temperature of the film was greater than 340°C. At 450°C, a significant, irreversible change in the stress of the film was observed. This change in stress was correlated with an increase in film electron density and a decrease in film thickness. The observed thermally activated stress-relaxation behavior was interpreted in terms of reflow of the glassy hydrogen-silsesquioxane-based material.",

author = "Chiang, {C. K.} and Wallace, {W. E.} and Lynn, {G. W.} and D. Feiler and W. Xia",

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AU - Chiang, C. K.

AU - Wallace, W. E.

AU - Lynn, G. W.

AU - Feiler, D.

AU - Xia, W.

PY - 2000/1/24

Y1 - 2000/1/24

N2 - The stress-temperature relationship of silica spin-on-glass thin films on silicon wafers was studied. Upon heating, the stress-temperature curves showed a dramatically increasing slope when the temperature of the film was greater than 340°C. At 450°C, a significant, irreversible change in the stress of the film was observed. This change in stress was correlated with an increase in film electron density and a decrease in film thickness. The observed thermally activated stress-relaxation behavior was interpreted in terms of reflow of the glassy hydrogen-silsesquioxane-based material.

AB - The stress-temperature relationship of silica spin-on-glass thin films on silicon wafers was studied. Upon heating, the stress-temperature curves showed a dramatically increasing slope when the temperature of the film was greater than 340°C. At 450°C, a significant, irreversible change in the stress of the film was observed. This change in stress was correlated with an increase in film electron density and a decrease in film thickness. The observed thermally activated stress-relaxation behavior was interpreted in terms of reflow of the glassy hydrogen-silsesquioxane-based material.

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VL - 76

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EP - 432

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Thermally induced stress relaxation and densification of spin-on-glass thin films

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