Thermally induced imprint properties of chemical solution derived PLZT thin films

We investigate the imprint phenomenon by poling ferroelectric PLZT capacitors into a known state and exposing the devices to elevated temperatures. It is found that the compensation of oxygen vacancies is a important process parameter in determining the tendency to imprint. In the case of PLZT thin films, the voltage shifts related to imprint failure are attributed to the trapping electrons at defect sites near film/electrode interface, the magnitude of polarization and concentration of defect-dipole complexes involving oxygen vacancies such as V″_Pb, - V″_o. The thermally induced voltage shifts in PLZT thin films are dopant concentration dependent and decrease with increasing the La concentration of the films.