Thermally induced imprint properties of chemical solution derived PLZT thin films

Seung Hyun Kim; D. J. Kim; J. G. Hong; S. K. Streiffer; A. I. Kingon

doi:10.1080/10584589808208036

Thermally induced imprint properties of chemical solution derived PLZT thin films

Seung Hyun Kim, D. J. Kim, J. G. Hong, S. K. Streiffer, A. I. Kingon

Oak Ridge National Laboratory

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We investigate the imprint phenomenon by poling ferroelectric PLZT capacitors into a known state and exposing the devices to elevated temperatures. It is found that the compensation of oxygen vacancies is a important process parameter in determining the tendency to imprint. In the case of PLZT thin films, the voltage shifts related to imprint failure are attributed to the trapping electrons at defect sites near film/electrode interface, the magnitude of polarization and concentration of defect-dipole complexes involving oxygen vacancies such as V″_Pb, - V″_o. The thermally induced voltage shifts in PLZT thin films are dopant concentration dependent and decrease with increasing the La concentration of the films.

Original language	English
Pages (from-to)	133-142
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	22
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589808208036
State	Published - 1998

Keywords

Chemical solution deposition
Ferroelectricity
Imprint
Oxygen vacancy
PLZT

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10.1080/10584589808208036

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title = "Thermally induced imprint properties of chemical solution derived PLZT thin films",

abstract = "We investigate the imprint phenomenon by poling ferroelectric PLZT capacitors into a known state and exposing the devices to elevated temperatures. It is found that the compensation of oxygen vacancies is a important process parameter in determining the tendency to imprint. In the case of PLZT thin films, the voltage shifts related to imprint failure are attributed to the trapping electrons at defect sites near film/electrode interface, the magnitude of polarization and concentration of defect-dipole complexes involving oxygen vacancies such as V″Pb, - V″o. The thermally induced voltage shifts in PLZT thin films are dopant concentration dependent and decrease with increasing the La concentration of the films.",

keywords = "Chemical solution deposition, Ferroelectricity, Imprint, Oxygen vacancy, PLZT",

author = "Kim, {Seung Hyun} and Kim, {D. J.} and Hong, {J. G.} and Streiffer, {S. K.} and Kingon, {A. I.}",

year = "1998",

doi = "10.1080/10584589808208036",

language = "English",

volume = "22",

pages = "133--142",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

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T1 - Thermally induced imprint properties of chemical solution derived PLZT thin films

AU - Kim, Seung Hyun

AU - Kim, D. J.

AU - Hong, J. G.

AU - Streiffer, S. K.

AU - Kingon, A. I.

PY - 1998

Y1 - 1998

N2 - We investigate the imprint phenomenon by poling ferroelectric PLZT capacitors into a known state and exposing the devices to elevated temperatures. It is found that the compensation of oxygen vacancies is a important process parameter in determining the tendency to imprint. In the case of PLZT thin films, the voltage shifts related to imprint failure are attributed to the trapping electrons at defect sites near film/electrode interface, the magnitude of polarization and concentration of defect-dipole complexes involving oxygen vacancies such as V″Pb, - V″o. The thermally induced voltage shifts in PLZT thin films are dopant concentration dependent and decrease with increasing the La concentration of the films.

AB - We investigate the imprint phenomenon by poling ferroelectric PLZT capacitors into a known state and exposing the devices to elevated temperatures. It is found that the compensation of oxygen vacancies is a important process parameter in determining the tendency to imprint. In the case of PLZT thin films, the voltage shifts related to imprint failure are attributed to the trapping electrons at defect sites near film/electrode interface, the magnitude of polarization and concentration of defect-dipole complexes involving oxygen vacancies such as V″Pb, - V″o. The thermally induced voltage shifts in PLZT thin films are dopant concentration dependent and decrease with increasing the La concentration of the films.

KW - Chemical solution deposition

KW - Ferroelectricity

KW - Imprint

KW - Oxygen vacancy

KW - PLZT

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DO - 10.1080/10584589808208036

M3 - Article

AN - SCOPUS:0032316287

SN - 1058-4587

VL - 22

SP - 133

EP - 142

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

Thermally induced imprint properties of chemical solution derived PLZT thin films

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