Thermal stability of W                         2                         B and W                         2                         B                         5                          contacts on ZnO

K. Ip; Rohit Khanna; D. P. Norton; S. J. Pearton; F. Ren; I. Kravchenko; C. J. Kao; G. C. Chi

doi:10.1016/j.apsusc.2005.03.133

Thermal stability of W ₂ B and W ₂ B ₅ contacts on ZnO

K. Ip, Rohit Khanna, D. P. Norton, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, G. C. Chi

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Rectifying contact formation on n-type bulk single crystal ZnO using novel W ₂ B or W ₂ B ₅ metallization schemes was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions due to outdiffusion of Zn through the metal. By sharp contrast, when a bilayer of Pt/Au was used on top of the boride layers, rectifying contacts with barrier heights of ∼0.4 eV for W ₂ B were obtained. The highest barrier height of 0.66 eV was achieved for W ₂ B ₅ annealed at 600 °C, although at this condition the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization.

Original language	English
Pages (from-to)	1846-1853
Number of pages	8
Journal	Applied Surface Science
Volume	252
Issue number	5
DOIs	https://doi.org/10.1016/j.apsusc.2005.03.133
State	Published - Dec 15 2005
Externally published	Yes

Funding

This research was sponsored by the Army Research Office under grant no. DAAD19-01-1-0603, the Army Research Laboratory, the National Science Foundation (DMR 0101438), and the Air Force Office of Scientific Research.

Funders	Funder number
National Science Foundation	DMR 0101438
Air Force Office of Scientific Research
Army Research Office	DAAD19-01-1-0603
Army Research Laboratory

Keywords

Auger electron spectroscopy
Scanning electron microscopy
Schottky barrier height

Access to Document

10.1016/j.apsusc.2005.03.133

Cite this

Ip, K., Khanna, R., Norton, D. P., Pearton, S. J., Ren, F., Kravchenko, I., Kao, C. J., & Chi, G. C. (2005). Thermal stability of W ₂ B and W ₂ B ₅ contacts on ZnO Applied Surface Science, 252(5), 1846-1853. https://doi.org/10.1016/j.apsusc.2005.03.133

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title = " Thermal stability of W 2 B and W 2 B 5 contacts on ZnO ",

abstract = " Rectifying contact formation on n-type bulk single crystal ZnO using novel W 2 B or W 2 B 5 metallization schemes was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions due to outdiffusion of Zn through the metal. By sharp contrast, when a bilayer of Pt/Au was used on top of the boride layers, rectifying contacts with barrier heights of ∼0.4 eV for W 2 B were obtained. The highest barrier height of 0.66 eV was achieved for W 2 B 5 annealed at 600 °C, although at this condition the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization.",

keywords = "Auger electron spectroscopy, Scanning electron microscopy, Schottky barrier height",

author = "K. Ip and Rohit Khanna and Norton, {D. P.} and Pearton, {S. J.} and F. Ren and I. Kravchenko and Kao, {C. J.} and Chi, {G. C.}",

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Ip, K, Khanna, R, Norton, DP, Pearton, SJ, Ren, F, Kravchenko, I, Kao, CJ & Chi, GC 2005, ' Thermal stability of W ₂ B and W ₂ B ₅ contacts on ZnO ', Applied Surface Science, vol. 252, no. 5, pp. 1846-1853. https://doi.org/10.1016/j.apsusc.2005.03.133

Thermal stability of W ₂ B and W ₂ B ₅ contacts on ZnO . / Ip, K.; Khanna, Rohit; Norton, D. P. et al.
In: Applied Surface Science, Vol. 252, No. 5, 15.12.2005, p. 1846-1853.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Thermal stability of W 2 B and W 2 B 5 contacts on ZnO

AU - Ip, K.

AU - Khanna, Rohit

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I.

AU - Kao, C. J.

AU - Chi, G. C.

PY - 2005/12/15

Y1 - 2005/12/15

N2 - Rectifying contact formation on n-type bulk single crystal ZnO using novel W 2 B or W 2 B 5 metallization schemes was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions due to outdiffusion of Zn through the metal. By sharp contrast, when a bilayer of Pt/Au was used on top of the boride layers, rectifying contacts with barrier heights of ∼0.4 eV for W 2 B were obtained. The highest barrier height of 0.66 eV was achieved for W 2 B 5 annealed at 600 °C, although at this condition the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization.

AB - Rectifying contact formation on n-type bulk single crystal ZnO using novel W 2 B or W 2 B 5 metallization schemes was studied using current-voltage, scanning electron microscopy and Auger electron spectroscopy (AES) measurements. When a single Au overlayer was used to reduce the metal sheet resistance, the contacts were ohmic for all annealing conditions due to outdiffusion of Zn through the metal. By sharp contrast, when a bilayer of Pt/Au was used on top of the boride layers, rectifying contacts with barrier heights of ∼0.4 eV for W 2 B were obtained. The highest barrier height of 0.66 eV was achieved for W 2 B 5 annealed at 600 °C, although at this condition the contact showed a reacted appearance and AES showed almost complete intermixing of the metallization.

KW - Auger electron spectroscopy

KW - Scanning electron microscopy

KW - Schottky barrier height

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Ip K, Khanna R, Norton DP, Pearton SJ, Ren F, Kravchenko I et al. Thermal stability of W ₂ B and W ₂ B ₅ contacts on ZnO Applied Surface Science. 2005 Dec 15;252(5):1846-1853. doi: 10.1016/j.apsusc.2005.03.133