Thermal stability of Ohmic contacts to InN

Rohit Khanna; B. P. Gila; L. Stafford; S. J. Pearton; F. Ren; I. I. Kravchenko; Amir Dabiran; A. Osinsky

doi:10.1063/1.2724900

Thermal stability of Ohmic contacts to InN

Rohit Khanna, B. P. Gila, L. Stafford, S. J. Pearton, F. Ren, I. I. Kravchenko, Amir Dabiran, A. Osinsky

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6 Scopus citations

Abstract

Ti/Al/Ni/Au and Ti/Al/TiB₂/Ti/Au Ohmic contacts on n-type InN were investigated as a function of annealing temperature. A minimum specific contact resistance of 1.6 × 10^-6 Ω cm^-2 was obtained for the TiB₂-based Ohmic contacts on n-type GaN with n ∼ 10¹⁸ cm^-3 after annealing at 900°C. The minimum value with the Ni-based metallization was higher (6 × 10^-6 Ω cm²). The measurement temperature dependence of contact resistance was similar for both Ti/Al/TiB₂/Ti/Au and Ti/Al/Ni/Au, suggesting that the same transport mechanism was present in both types of contacts. The TiB₂-based Ohmic contacts displayed superior thermal stability, suggesting that it is a superior diffusion barrier at these temperatures than Ni.

Original language	English
Article number	162107
Journal	Applied Physics Letters
Volume	90
Issue number	16
DOIs	https://doi.org/10.1063/1.2724900
State	Published - 2007
Externally published	Yes

Funding

The work at UF is partially supported by AFOSR under Grant No. F49620-03-1-0370, by the Army Research Office under Grant No. DAAD19-01-1-0603, and by the National Science Foundation (DMR 0400416, L. Hess).

Funders	Funder number
National Science Foundation	DMR 0400416
Air Force Office of Scientific Research	F49620-03-1-0370
Army Research Office	DAAD19-01-1-0603
University of Florida

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title = "Thermal stability of Ohmic contacts to InN",

abstract = "Ti/Al/Ni/Au and Ti/Al/TiB2/Ti/Au Ohmic contacts on n-type InN were investigated as a function of annealing temperature. A minimum specific contact resistance of 1.6 × 10-6 Ω cm-2 was obtained for the TiB2-based Ohmic contacts on n-type GaN with n ∼ 1018 cm-3 after annealing at 900°C. The minimum value with the Ni-based metallization was higher (6 × 10-6 Ω cm2). The measurement temperature dependence of contact resistance was similar for both Ti/Al/TiB2/Ti/Au and Ti/Al/Ni/Au, suggesting that the same transport mechanism was present in both types of contacts. The TiB2-based Ohmic contacts displayed superior thermal stability, suggesting that it is a superior diffusion barrier at these temperatures than Ni.",

author = "Rohit Khanna and Gila, {B. P.} and L. Stafford and Pearton, {S. J.} and F. Ren and Kravchenko, {I. I.} and Amir Dabiran and A. Osinsky",

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doi = "10.1063/1.2724900",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Thermal stability of Ohmic contacts to InN

AU - Khanna, Rohit

AU - Gila, B. P.

AU - Stafford, L.

AU - Pearton, S. J.

AU - Ren, F.

AU - Kravchenko, I. I.

AU - Dabiran, Amir

AU - Osinsky, A.

PY - 2007

Y1 - 2007

N2 - Ti/Al/Ni/Au and Ti/Al/TiB2/Ti/Au Ohmic contacts on n-type InN were investigated as a function of annealing temperature. A minimum specific contact resistance of 1.6 × 10-6 Ω cm-2 was obtained for the TiB2-based Ohmic contacts on n-type GaN with n ∼ 1018 cm-3 after annealing at 900°C. The minimum value with the Ni-based metallization was higher (6 × 10-6 Ω cm2). The measurement temperature dependence of contact resistance was similar for both Ti/Al/TiB2/Ti/Au and Ti/Al/Ni/Au, suggesting that the same transport mechanism was present in both types of contacts. The TiB2-based Ohmic contacts displayed superior thermal stability, suggesting that it is a superior diffusion barrier at these temperatures than Ni.

AB - Ti/Al/Ni/Au and Ti/Al/TiB2/Ti/Au Ohmic contacts on n-type InN were investigated as a function of annealing temperature. A minimum specific contact resistance of 1.6 × 10-6 Ω cm-2 was obtained for the TiB2-based Ohmic contacts on n-type GaN with n ∼ 1018 cm-3 after annealing at 900°C. The minimum value with the Ni-based metallization was higher (6 × 10-6 Ω cm2). The measurement temperature dependence of contact resistance was similar for both Ti/Al/TiB2/Ti/Au and Ti/Al/Ni/Au, suggesting that the same transport mechanism was present in both types of contacts. The TiB2-based Ohmic contacts displayed superior thermal stability, suggesting that it is a superior diffusion barrier at these temperatures than Ni.

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DO - 10.1063/1.2724900

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 162107

ER -

Thermal stability of Ohmic contacts to InN

Abstract

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