Thermal stability of epitaxial SrRuO 3 films as a function of oxygen pressure

Ho Nyung Lee; Hans M. Christen; Matthew F. Chisholm; Christopher M. Rouleau; Douglas H. Lowndes

doi:10.1063/1.1753650

Thermal stability of epitaxial SrRuO ₃ films as a function of oxygen pressure

Ho Nyung Lee, Hans M. Christen, Matthew F. Chisholm, Christopher M. Rouleau, Douglas H. Lowndes

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Abstract

The thermal stability of epitaxial SrRuO ₃ films grown by pulsed laser deposition on (001) SrTiO ₃ substrates were investigated. It was found that the epitaxial film exhibited atomically flat surfaces with single unit-cell steps, even after exposure to air at room temperature. It was also found that the films remained stable at temperatures as high as 720°C in moderate oxygen ambients, but higher temperature anneals at lower pressure resulted in the formation of islands and pits due to the decomposition of SrRuO ₃. A temperature and oxygen pressure stability map, consistent with a thermally activated decomposition process having an activation energy of 88 kJ/mol was determined using in situ RHEED.

Original language	English
Pages (from-to)	4107-4109
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	20
DOIs	https://doi.org/10.1063/1.1753650
State	Published - May 17 2004

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title = "Thermal stability of epitaxial SrRuO 3 films as a function of oxygen pressure",

abstract = "The thermal stability of epitaxial SrRuO 3 films grown by pulsed laser deposition on (001) SrTiO 3 substrates were investigated. It was found that the epitaxial film exhibited atomically flat surfaces with single unit-cell steps, even after exposure to air at room temperature. It was also found that the films remained stable at temperatures as high as 720°C in moderate oxygen ambients, but higher temperature anneals at lower pressure resulted in the formation of islands and pits due to the decomposition of SrRuO 3. A temperature and oxygen pressure stability map, consistent with a thermally activated decomposition process having an activation energy of 88 kJ/mol was determined using in situ RHEED.",

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AU - Lee, Ho Nyung

AU - Christen, Hans M.

AU - Chisholm, Matthew F.

AU - Rouleau, Christopher M.

AU - Lowndes, Douglas H.

PY - 2004/5/17

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N2 - The thermal stability of epitaxial SrRuO 3 films grown by pulsed laser deposition on (001) SrTiO 3 substrates were investigated. It was found that the epitaxial film exhibited atomically flat surfaces with single unit-cell steps, even after exposure to air at room temperature. It was also found that the films remained stable at temperatures as high as 720°C in moderate oxygen ambients, but higher temperature anneals at lower pressure resulted in the formation of islands and pits due to the decomposition of SrRuO 3. A temperature and oxygen pressure stability map, consistent with a thermally activated decomposition process having an activation energy of 88 kJ/mol was determined using in situ RHEED.

AB - The thermal stability of epitaxial SrRuO 3 films grown by pulsed laser deposition on (001) SrTiO 3 substrates were investigated. It was found that the epitaxial film exhibited atomically flat surfaces with single unit-cell steps, even after exposure to air at room temperature. It was also found that the films remained stable at temperatures as high as 720°C in moderate oxygen ambients, but higher temperature anneals at lower pressure resulted in the formation of islands and pits due to the decomposition of SrRuO 3. A temperature and oxygen pressure stability map, consistent with a thermally activated decomposition process having an activation energy of 88 kJ/mol was determined using in situ RHEED.

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Thermal stability of epitaxial SrRuO ₃ films as a function of oxygen pressure

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