Thermal stability of epitaxial α -Ga2O3and (Al,Ga)2O3layers on m-plane sapphire

J. P. McCandless; C. S. Chang; K. Nomoto; J. Casamento; V. Protasenko; P. Vogt; D. Rowe; K. Gann; S. T. Ho; W. Li; R. Jinno; Y. Cho; A. J. Green; K. D. Chabak; D. G. Schlom; M. O. Thompson; D. A. Muller; H. G. Xing; D. Jena

doi:10.1063/5.0064278

Thermal stability of epitaxial α -Ga₂O₃and (Al,Ga)₂O₃layers on m-plane sapphire

J. P. McCandless
, C. S. Chang
, K. Nomoto
, J. Casamento
, V. Protasenko
, P. Vogt
, D. Rowe
, K. Gann
, S. T. Ho
, W. Li
, R. Jinno
, Y. Cho
, A. J. Green
, K. D. Chabak
, D. G. Schlom
, M. O. Thompson
, D. A. Muller
, H. G. Xing
, D. Jena

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

Here, we have explored the thermal stability of α-(Al,Ga)2O3 grown by the molecular-beam epitaxy on m-plane sapphire under high-temperature annealing conditions for various Al compositions (i.e., 0%, 46%, and 100%). Though uncapped α-Ga2O3 undergoes a structural phase transition to the thermodynamically stable β-phase at high temperatures, we find that an aluminum oxide cap grown by atomic layer deposition preserves the α-phase. Unlike uncapped α-Ga2O3, uncapped α-(Al,Ga)2O3 at 46% and 100% Al content remain stable at high temperatures. We quantify the evolution of the structural properties of α-Ga2O3, α-(Al,Ga)2O3, and α-Al2O3 and the energy bandgap of α-Ga2O3 up to 900 °C. Throughout the anneals, the α-Ga2O3 capped with aluminum oxide retains its high crystal quality, with no substantial roughening.

Original language	English
Article number	062102
Journal	Applied Physics Letters
Volume	119
Issue number	6
DOIs	https://doi.org/10.1063/5.0064278
State	Published - Aug 9 2021
Externally published	Yes

Funding

The authors would like to thank Shin Mou, Tadj Asel, and Adam Neal of the Air Force Research Laboratory for their helpful discussions and feedback related to this effort. This research was supported by the Air Force Research Laboratory-Cornell Center for Epitaxial Solutions (ACCESS) under Grant No. FA9550-18-1-0529. J.P.M. acknowledges the support of a National Science Foundation Graduate Research Fellowship under Grant No. DGE-1650441. This work used the CCMR and CESI Shared Facilities partly sponsored by the NSF MRSEC program (No. DMR-1719875) and MRI (No. DMR-1338010), the National Science Foundation Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM) under Cooperative Agreement No. DMR-1539918, and the Kavli Institute at Cornell (KIC).

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10.1063/5.0064278

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McCandless, J. P., Chang, C. S., Nomoto, K., Casamento, J., Protasenko, V., Vogt, P., Rowe, D., Gann, K., Ho, S. T., Li, W., Jinno, R., Cho, Y., Green, A. J., Chabak, K. D., Schlom, D. G., Thompson, M. O., Muller, D. A., Xing, H. G., & Jena, D. (2021). Thermal stability of epitaxial α -Ga₂O₃and (Al,Ga)₂O₃layers on m-plane sapphire. Applied Physics Letters, 119(6), Article 062102. https://doi.org/10.1063/5.0064278

@article{d5a422f972dd4250af0e50a25c9bb5c8,

title = "Thermal stability of epitaxial α -Ga2O3and (Al,Ga)2O3layers on m-plane sapphire",

abstract = "Here, we have explored the thermal stability of α-(Al,Ga)2O3 grown by the molecular-beam epitaxy on m-plane sapphire under high-temperature annealing conditions for various Al compositions (i.e., 0\%, 46\%, and 100\%). Though uncapped α-Ga2O3 undergoes a structural phase transition to the thermodynamically stable β-phase at high temperatures, we find that an aluminum oxide cap grown by atomic layer deposition preserves the α-phase. Unlike uncapped α-Ga2O3, uncapped α-(Al,Ga)2O3 at 46\% and 100\% Al content remain stable at high temperatures. We quantify the evolution of the structural properties of α-Ga2O3, α-(Al,Ga)2O3, and α-Al2O3 and the energy bandgap of α-Ga2O3 up to 900 °C. Throughout the anneals, the α-Ga2O3 capped with aluminum oxide retains its high crystal quality, with no substantial roughening.",

author = "McCandless, \{J. P.\} and Chang, \{C. S.\} and K. Nomoto and J. Casamento and V. Protasenko and P. Vogt and D. Rowe and K. Gann and Ho, \{S. T.\} and W. Li and R. Jinno and Y. Cho and Green, \{A. J.\} and Chabak, \{K. D.\} and Schlom, \{D. G.\} and Thompson, \{M. O.\} and Muller, \{D. A.\} and Xing, \{H. G.\} and D. Jena",

note = "Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = aug,

day = "9",

doi = "10.1063/5.0064278",

language = "English",

volume = "119",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

McCandless, JP, Chang, CS, Nomoto, K, Casamento, J, Protasenko, V, Vogt, P, Rowe, D, Gann, K, Ho, ST, Li, W, Jinno, R, Cho, Y, Green, AJ, Chabak, KD, Schlom, DG, Thompson, MO, Muller, DA, Xing, HG & Jena, D 2021, 'Thermal stability of epitaxial α -Ga₂O₃and (Al,Ga)₂O₃layers on m-plane sapphire', Applied Physics Letters, vol. 119, no. 6, 062102. https://doi.org/10.1063/5.0064278

TY - JOUR

T1 - Thermal stability of epitaxial α -Ga2O3and (Al,Ga)2O3layers on m-plane sapphire

AU - McCandless, J. P.

AU - Chang, C. S.

AU - Nomoto, K.

AU - Casamento, J.

AU - Protasenko, V.

AU - Vogt, P.

AU - Rowe, D.

AU - Gann, K.

AU - Ho, S. T.

AU - Li, W.

AU - Jinno, R.

AU - Cho, Y.

AU - Green, A. J.

AU - Chabak, K. D.

AU - Schlom, D. G.

AU - Thompson, M. O.

AU - Muller, D. A.

AU - Xing, H. G.

AU - Jena, D.

PY - 2021/8/9

Y1 - 2021/8/9

N2 - Here, we have explored the thermal stability of α-(Al,Ga)2O3 grown by the molecular-beam epitaxy on m-plane sapphire under high-temperature annealing conditions for various Al compositions (i.e., 0%, 46%, and 100%). Though uncapped α-Ga2O3 undergoes a structural phase transition to the thermodynamically stable β-phase at high temperatures, we find that an aluminum oxide cap grown by atomic layer deposition preserves the α-phase. Unlike uncapped α-Ga2O3, uncapped α-(Al,Ga)2O3 at 46% and 100% Al content remain stable at high temperatures. We quantify the evolution of the structural properties of α-Ga2O3, α-(Al,Ga)2O3, and α-Al2O3 and the energy bandgap of α-Ga2O3 up to 900 °C. Throughout the anneals, the α-Ga2O3 capped with aluminum oxide retains its high crystal quality, with no substantial roughening.

AB - Here, we have explored the thermal stability of α-(Al,Ga)2O3 grown by the molecular-beam epitaxy on m-plane sapphire under high-temperature annealing conditions for various Al compositions (i.e., 0%, 46%, and 100%). Though uncapped α-Ga2O3 undergoes a structural phase transition to the thermodynamically stable β-phase at high temperatures, we find that an aluminum oxide cap grown by atomic layer deposition preserves the α-phase. Unlike uncapped α-Ga2O3, uncapped α-(Al,Ga)2O3 at 46% and 100% Al content remain stable at high temperatures. We quantify the evolution of the structural properties of α-Ga2O3, α-(Al,Ga)2O3, and α-Al2O3 and the energy bandgap of α-Ga2O3 up to 900 °C. Throughout the anneals, the α-Ga2O3 capped with aluminum oxide retains its high crystal quality, with no substantial roughening.

UR - https://www.scopus.com/pages/publications/85113715102

U2 - 10.1063/5.0064278

DO - 10.1063/5.0064278

M3 - Article

AN - SCOPUS:85113715102

SN - 0003-6951

VL - 119

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062102

ER -

Thermal stability of epitaxial α -Ga₂O₃and (Al,Ga)₂O₃layers on m-plane sapphire

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