Abstract
The electronic structure and thermal stability of atomically uniform Pb films, which were grown on Si(111), were investigated. The electronic structure of the film was analyzed using angle-resolved photoemission measurements. The photoemission measurements of the sample at 100 K exhibited layer-resolved quantum well states, which were correlated with dynamic variations in thermal stability. It was observed that the odd film thickness N = 5, 7, and 9 monolayer exhibited sharp quantum well states.
| Original language | English |
|---|---|
| Article number | 026802 |
| Pages (from-to) | 026802-1-026802-4 |
| Journal | Physical Review Letters |
| Volume | 93 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jul 9 2004 |
| Externally published | Yes |
Funding
This work is supported by the U.S. National Science Foundation (Grant No. DMR-02-03003 for T. C. C. and Grant No. DMR-02-05328 for M. Y. C.), the U.S. Department of Energy (Grant No. DE-FG02-97ER45632 for M. Y. C.), and the National Science Council of Taiwan (Grant No. 91-2112-M-001-057 for C. M. W.). The computation used resources of the National Energy Research Scientific Computing Center, which is supported by the U.S. Department of Energy (Grant No. DE-AC03-76SF00098). We acknowledge the Petroleum Research Fund, administered by the American Chemical Society, and the U.S. Department of Energy, Division of Materials Sciences (Grant No. DEFG02-91ER45439), for partial support of the synchrotron beam ?>line operation and the central facilities of the Frederick Seitz Materials Research Laboratory. The Synchrotron Radiation Center of the University of Wisconsin–Madison is supported by the U.S. National Science Foundation (Grant No. DMR-00-84402).