Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices

T. K. Mogi; Michael O. Thompson; H. J. Gossmann; J. M. Poate; H. S. Luftman

doi:10.1063/1.117389

Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices

T. K. Mogi
, Michael O. Thompson
, H. J. Gossmann
, J. M. Poate
, H. S. Luftman

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Depth dependent nitridation enhanced diffusion (NED) of Sb was investigated by annealing Si(100) doping superlattice (DSL) structures in NH, at 810-910°C for 15-180 min. These multilayered DSLs consisted of six 10 nm wide Sb doping spikes spaced 100 nm apart. Antimony NED, attributed to vacancy injection, indicated vacancy supersaturation values of 3-5. From the spatial decay of Sb NED, lower bounds for vacancy diffusivities of (7.9±1.4)±10^-14, (1.2±0.2) × 10^-12, and 2.1 × 10^-11 cM²/s were obtained at 810, 860, and 910°C, respectively. Evidence of trap limited vacancy diffusivity was observed.

Original language	English
Pages (from-to)	1273-1275
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	9
DOIs	https://doi.org/10.1063/1.117389
State	Published - Aug 26 1996
Externally published	Yes

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title = "Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices",

abstract = "Depth dependent nitridation enhanced diffusion (NED) of Sb was investigated by annealing Si(100) doping superlattice (DSL) structures in NH, at 810-910°C for 15-180 min. These multilayered DSLs consisted of six 10 nm wide Sb doping spikes spaced 100 nm apart. Antimony NED, attributed to vacancy injection, indicated vacancy supersaturation values of 3-5. From the spatial decay of Sb NED, lower bounds for vacancy diffusivities of (7.9±1.4)±10-14, (1.2±0.2) × 10-12, and 2.1 × 10-11 cM2/s were obtained at 810, 860, and 910°C, respectively. Evidence of trap limited vacancy diffusivity was observed.",

author = "Mogi, \{T. K.\} and Thompson, \{Michael O.\} and Gossmann, \{H. J.\} and Poate, \{J. M.\} and Luftman, \{H. S.\}",

year = "1996",

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doi = "10.1063/1.117389",

language = "English",

volume = "69",

pages = "1273--1275",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices

AU - Mogi, T. K.

AU - Thompson, Michael O.

AU - Gossmann, H. J.

AU - Poate, J. M.

AU - Luftman, H. S.

PY - 1996/8/26

Y1 - 1996/8/26

N2 - Depth dependent nitridation enhanced diffusion (NED) of Sb was investigated by annealing Si(100) doping superlattice (DSL) structures in NH, at 810-910°C for 15-180 min. These multilayered DSLs consisted of six 10 nm wide Sb doping spikes spaced 100 nm apart. Antimony NED, attributed to vacancy injection, indicated vacancy supersaturation values of 3-5. From the spatial decay of Sb NED, lower bounds for vacancy diffusivities of (7.9±1.4)±10-14, (1.2±0.2) × 10-12, and 2.1 × 10-11 cM2/s were obtained at 810, 860, and 910°C, respectively. Evidence of trap limited vacancy diffusivity was observed.

AB - Depth dependent nitridation enhanced diffusion (NED) of Sb was investigated by annealing Si(100) doping superlattice (DSL) structures in NH, at 810-910°C for 15-180 min. These multilayered DSLs consisted of six 10 nm wide Sb doping spikes spaced 100 nm apart. Antimony NED, attributed to vacancy injection, indicated vacancy supersaturation values of 3-5. From the spatial decay of Sb NED, lower bounds for vacancy diffusivities of (7.9±1.4)±10-14, (1.2±0.2) × 10-12, and 2.1 × 10-11 cM2/s were obtained at 810, 860, and 910°C, respectively. Evidence of trap limited vacancy diffusivity was observed.

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U2 - 10.1063/1.117389

DO - 10.1063/1.117389

M3 - Article

AN - SCOPUS:0041782286

SN - 0003-6951

VL - 69

SP - 1273

EP - 1275

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Thermal nitridation enhanced diffusion of Sb and Si(100) doping superlattices

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