Thermal evolution of the metastable r8 and bc8 polymorphs of silicon

Bianca Haberl, Malcolm Guthrie, Stanislav V. Sinogeikin, Guoyin Shen, James S. Williams, Jodie E. Bradby

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    31 Scopus citations

    Abstract

    The kinetics of two metastable polymorphs of silicon under thermal annealing was investigated. These phases with body-centered cubic bc8 and rhombohedral r8 structures can be formed upon pressure release from metallic silicon. In this study, these metastable polymorphs were formed by two different methods, via point loading and in a diamond anvil cell (DAC). Upon thermal annealing different transition pathways were detected. In the point loading case, the previously reported Si-XIII formed and was confirmed as a new phase with an as-yet-unidentified structure. In the DAC case, bc8-Si transformed to the hexagonal-diamond structure at elevated pressure, consistent with previous studies at ambient pressure. In contrast, r8-Si transformed directly to diamond-cubic Si at a temperature of 255°. These data were used to construct diagrams of the metastability regimes of the polymorphs formed in a DAC and may prove useful for potential technological applications of these metastable polymorphs.

    Original languageEnglish
    Pages (from-to)99-116
    Number of pages18
    JournalHigh Pressure Research
    Volume35
    Issue number2
    DOIs
    StatePublished - Apr 3 2015

    Funding

    This work was supported by funding from the Australian Research Council (ARC). JEB is supported by an ARC Future Fellowship. Work by MG was fully supported by EFree, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences under Award No. DE-SC0001057. BH acknowledges current funding through an Alvin M. Weinberg Fellowship (ORNL) and the Spallation Neutron Source (ORNL), sponsored by the U.S. Department of Energy, Office of Basic Energy Sciences. HPCAT operations are supported by DOE-NNSA under Award No. DE-NA0001974 and DOE-BES under Award No. DE-FG02-99ER45775, with partial instrumentation funding by NSF. Use of the COMPRES-GSECARS gas loading system was supported by COMPRES under NSF Cooperative Agreement EAR 11-57758 and by GSECARS through NSF grant EAR-1128799 and DOE grant DE-FG02-94ER14466. APS is supported by DOE-BES, under Contract No. DE-AC02-06CH11357.

    Keywords

    • in situ annealing
    • metastable polymorphs
    • pressure-induced transitions
    • silicon

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