Thermal conductivity of AlN thin films deposited by RF magnetron sputtering

Min Ho Park; Sang Ho Kim

doi:10.1016/j.mssp.2011.04.007

Thermal conductivity of AlN thin films deposited by RF magnetron sputtering

Min Ho Park, Sang Ho Kim

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Aluminum nitride (AlN) film, which is being investigated as a possible passivation layer in inkjet printheads, was deposited on a Si (1 0 0) substrate at 400°C by radio frequency (RF) magnetron sputtering using an AlN ceramic target. Dependence on various reactive gas compositions (Ar, Ar:H ₂, Ar:N ₂) during sputtering was investigated to determine thermal conductivity. The crystallinity, grain size, and Al-N bonding changes by the gas compositions were examined and are discussed in relation to thermal conductivity. Using an Ar and 4% H ₂, the deposited AlN films were crystalline with larger grains. Using a higher nitrogen concentration of 10%, a near amorphous phase, finer morphology, and an enhanced Al-N bonding ratio were achieved. A high thermal conductivity of 134 W/mk, which is nine times higher than that of the conventional Si ₃N ₄ passivation film, was obtained with a 10% N ₂ reactive gas mixture. A high Al-N bonding ratio in AlN film is considered the most important factor for higher thermal conductivity.

Original language	English
Pages (from-to)	6-10
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	15
Issue number	1
DOIs	https://doi.org/10.1016/j.mssp.2011.04.007
State	Published - Feb 2012
Externally published	Yes

Funding

This study was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea, and the Educational Research Fund by the Korea University of Technology and Education .

Funders	Funder number
Educational Research Fund
Korea University of Technology and Education
Ministry of Knowledge Economy

Keywords

Aluminum nitride (AlN)
Inkjet printhead
Passivation layer
RF sputtering
Thermal conductivity

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10.1016/j.mssp.2011.04.007

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title = "Thermal conductivity of AlN thin films deposited by RF magnetron sputtering",

abstract = "Aluminum nitride (AlN) film, which is being investigated as a possible passivation layer in inkjet printheads, was deposited on a Si (1 0 0) substrate at 400°C by radio frequency (RF) magnetron sputtering using an AlN ceramic target. Dependence on various reactive gas compositions (Ar, Ar:H 2, Ar:N 2) during sputtering was investigated to determine thermal conductivity. The crystallinity, grain size, and Al-N bonding changes by the gas compositions were examined and are discussed in relation to thermal conductivity. Using an Ar and 4% H 2, the deposited AlN films were crystalline with larger grains. Using a higher nitrogen concentration of 10%, a near amorphous phase, finer morphology, and an enhanced Al-N bonding ratio were achieved. A high thermal conductivity of 134 W/mk, which is nine times higher than that of the conventional Si 3N 4 passivation film, was obtained with a 10% N 2 reactive gas mixture. A high Al-N bonding ratio in AlN film is considered the most important factor for higher thermal conductivity.",

keywords = "Aluminum nitride (AlN), Inkjet printhead, Passivation layer, RF sputtering, Thermal conductivity",

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AU - Park, Min Ho

AU - Kim, Sang Ho

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N2 - Aluminum nitride (AlN) film, which is being investigated as a possible passivation layer in inkjet printheads, was deposited on a Si (1 0 0) substrate at 400°C by radio frequency (RF) magnetron sputtering using an AlN ceramic target. Dependence on various reactive gas compositions (Ar, Ar:H 2, Ar:N 2) during sputtering was investigated to determine thermal conductivity. The crystallinity, grain size, and Al-N bonding changes by the gas compositions were examined and are discussed in relation to thermal conductivity. Using an Ar and 4% H 2, the deposited AlN films were crystalline with larger grains. Using a higher nitrogen concentration of 10%, a near amorphous phase, finer morphology, and an enhanced Al-N bonding ratio were achieved. A high thermal conductivity of 134 W/mk, which is nine times higher than that of the conventional Si 3N 4 passivation film, was obtained with a 10% N 2 reactive gas mixture. A high Al-N bonding ratio in AlN film is considered the most important factor for higher thermal conductivity.

AB - Aluminum nitride (AlN) film, which is being investigated as a possible passivation layer in inkjet printheads, was deposited on a Si (1 0 0) substrate at 400°C by radio frequency (RF) magnetron sputtering using an AlN ceramic target. Dependence on various reactive gas compositions (Ar, Ar:H 2, Ar:N 2) during sputtering was investigated to determine thermal conductivity. The crystallinity, grain size, and Al-N bonding changes by the gas compositions were examined and are discussed in relation to thermal conductivity. Using an Ar and 4% H 2, the deposited AlN films were crystalline with larger grains. Using a higher nitrogen concentration of 10%, a near amorphous phase, finer morphology, and an enhanced Al-N bonding ratio were achieved. A high thermal conductivity of 134 W/mk, which is nine times higher than that of the conventional Si 3N 4 passivation film, was obtained with a 10% N 2 reactive gas mixture. A high Al-N bonding ratio in AlN film is considered the most important factor for higher thermal conductivity.

KW - Aluminum nitride (AlN)

KW - Inkjet printhead

KW - Passivation layer

KW - RF sputtering

KW - Thermal conductivity

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JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 1

ER -

Thermal conductivity of AlN thin films deposited by RF magnetron sputtering

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