Thermal Boundary Conductance Mapping at Metal-MoSe2 Interface

David B. Brown; Xufan Li; Kai Xiao; David B. Geohegan; Satish Kumar

doi:10.1109/ITHERM.2018.8419470

Thermal Boundary Conductance Mapping at Metal-MoSe₂ Interface

David B. Brown, Xufan Li, Kai Xiao, David B. Geohegan, Satish Kumar

Functional Hybrid Nanomaterials

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Increasing power density in the microelectronic devices has led to thermal management concerns to ensure efficient, reliable, and long-term operation. As device dimensions continue to decrease, the interfaces of dissimilar materials (e.g., metal-semiconductor) may limit heat removal from the device active region. Improving the thermal transport across interfaces is a necessary consideration during the design process and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. In addition, low-dimensional materials, such as 1D nanotubes and nanowires and 2D sheets, have attracted considerable interest because of their unique physical properties and small footprint. Two-dimensional transition metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal-TMD electrical contact resistance, but the thermal properties have received much less attention. We measured and analyzed the TBC across Al-Ti-MoSe₂-SiO₂ interface using time-domain thermoreflectance. The results are an order of magnitude larger than previously reported values at MoSe₂-Au interfaces, but still near the low end for typical metal-semiconductor interfaces.

Original language	English
Title of host publication	Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	67-72
Number of pages	6
ISBN (Electronic)	9781538612729
DOIs	https://doi.org/10.1109/ITHERM.2018.8419470
State	Published - Jul 24 2018
Event	17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018 - San Diego, United States Duration: May 29 2018 → Jun 1 2018

Publication series

Name	Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018

Conference

Conference	17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018
Country/Territory	United States
City	San Diego
Period	05/29/18 → 06/1/18

Funding

The authors would like to thank Ben Hollerbach at the Georgia Tech Institute of Electronics and Nanotechnology (IEN) for assistance with sample patterning. Synthesis of the 2D materials was supported by the Materials Science and Engineering Division, Office of Basic Energy Sciences, U.S. Department of Energy.

Keywords

2D materials
MoSe
thermal boundary conductance
time-domain thermoreflectance

Access to Document

10.1109/ITHERM.2018.8419470

Cite this

Brown, D. B., Li, X., Xiao, K., Geohegan, D. B., & Kumar, S. (2018). Thermal Boundary Conductance Mapping at Metal-MoSe₂ Interface. In Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018 (pp. 67-72). Article 8419470 (Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ITHERM.2018.8419470

Brown, David B. ; Li, Xufan ; Xiao, Kai et al. / Thermal Boundary Conductance Mapping at Metal-MoSe₂ Interface. Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 67-72 (Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018).

@inproceedings{56333eb796424400b971b1b7a67c578a,

title = "Thermal Boundary Conductance Mapping at Metal-MoSe2 Interface",

abstract = "Increasing power density in the microelectronic devices has led to thermal management concerns to ensure efficient, reliable, and long-term operation. As device dimensions continue to decrease, the interfaces of dissimilar materials (e.g., metal-semiconductor) may limit heat removal from the device active region. Improving the thermal transport across interfaces is a necessary consideration during the design process and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. In addition, low-dimensional materials, such as 1D nanotubes and nanowires and 2D sheets, have attracted considerable interest because of their unique physical properties and small footprint. Two-dimensional transition metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal-TMD electrical contact resistance, but the thermal properties have received much less attention. We measured and analyzed the TBC across Al-Ti-MoSe2-SiO2 interface using time-domain thermoreflectance. The results are an order of magnitude larger than previously reported values at MoSe2-Au interfaces, but still near the low end for typical metal-semiconductor interfaces.",

keywords = "2D materials, MoSe, thermal boundary conductance, time-domain thermoreflectance",

author = "Brown, {David B.} and Xufan Li and Kai Xiao and Geohegan, {David B.} and Satish Kumar",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018 ; Conference date: 29-05-2018 Through 01-06-2018",

year = "2018",

month = jul,

day = "24",

doi = "10.1109/ITHERM.2018.8419470",

language = "English",

series = "Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "67--72",

booktitle = "Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018",

}

Brown, DB, Li, X, Xiao, K, Geohegan, DB & Kumar, S 2018, Thermal Boundary Conductance Mapping at Metal-MoSe₂ Interface. in Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018., 8419470, Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018, Institute of Electrical and Electronics Engineers Inc., pp. 67-72, 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018, San Diego, United States, 05/29/18. https://doi.org/10.1109/ITHERM.2018.8419470

Thermal Boundary Conductance Mapping at Metal-MoSe₂ Interface. / Brown, David B.; Li, Xufan; Xiao, Kai et al.
Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 67-72 8419470 (Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermal Boundary Conductance Mapping at Metal-MoSe2 Interface

AU - Brown, David B.

AU - Li, Xufan

AU - Xiao, Kai

AU - Geohegan, David B.

AU - Kumar, Satish

PY - 2018/7/24

Y1 - 2018/7/24

N2 - Increasing power density in the microelectronic devices has led to thermal management concerns to ensure efficient, reliable, and long-term operation. As device dimensions continue to decrease, the interfaces of dissimilar materials (e.g., metal-semiconductor) may limit heat removal from the device active region. Improving the thermal transport across interfaces is a necessary consideration during the design process and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. In addition, low-dimensional materials, such as 1D nanotubes and nanowires and 2D sheets, have attracted considerable interest because of their unique physical properties and small footprint. Two-dimensional transition metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal-TMD electrical contact resistance, but the thermal properties have received much less attention. We measured and analyzed the TBC across Al-Ti-MoSe2-SiO2 interface using time-domain thermoreflectance. The results are an order of magnitude larger than previously reported values at MoSe2-Au interfaces, but still near the low end for typical metal-semiconductor interfaces.

AB - Increasing power density in the microelectronic devices has led to thermal management concerns to ensure efficient, reliable, and long-term operation. As device dimensions continue to decrease, the interfaces of dissimilar materials (e.g., metal-semiconductor) may limit heat removal from the device active region. Improving the thermal transport across interfaces is a necessary consideration during the design process and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. In addition, low-dimensional materials, such as 1D nanotubes and nanowires and 2D sheets, have attracted considerable interest because of their unique physical properties and small footprint. Two-dimensional transition metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal-TMD electrical contact resistance, but the thermal properties have received much less attention. We measured and analyzed the TBC across Al-Ti-MoSe2-SiO2 interface using time-domain thermoreflectance. The results are an order of magnitude larger than previously reported values at MoSe2-Au interfaces, but still near the low end for typical metal-semiconductor interfaces.

KW - 2D materials

KW - MoSe

KW - thermal boundary conductance

KW - time-domain thermoreflectance

UR - http://www.scopus.com/inward/record.url?scp=85051083879&partnerID=8YFLogxK

U2 - 10.1109/ITHERM.2018.8419470

DO - 10.1109/ITHERM.2018.8419470

M3 - Conference contribution

AN - SCOPUS:85051083879

T3 - Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018

SP - 67

EP - 72

BT - Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018

Y2 - 29 May 2018 through 1 June 2018

ER -

Brown DB, Li X, Xiao K, Geohegan DB, Kumar S. Thermal Boundary Conductance Mapping at Metal-MoSe₂ Interface. In Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 67-72. 8419470. (Proceedings of the 17th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2018). doi: 10.1109/ITHERM.2018.8419470