Thermal and radiation response of 4H-SiC Schottky diodes with direct-write electrical contacts

Neil R. Taylor; Yongchao Yu; Mihee Ji; Tolga Aytug; Shannon Mahurin; Richard Mayes; Sacit Cetiner; M. Parans Paranthaman; Dianne Ezell; Lei R. Cao; Pooran C. Joshi

doi:10.1063/5.0007496

Thermal and radiation response of 4H-SiC Schottky diodes with direct-write electrical contacts

Neil R. Taylor, Yongchao Yu, Mihee Ji, Tolga Aytug, Shannon Mahurin, Richard Mayes, Sacit Cetiner, M. Parans Paranthaman, Dianne Ezell, Lei R. Cao, Pooran C. Joshi

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A high-sensitivity 4H-SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H-SiC Schottky diodes with direct-write printed silver contacts on the 5 μm-thick epilayer on 4H-SiC were characterized electrically in terms of the forward and reverse current-voltage and high-frequency capacitance-voltage characteristics. The turn-on voltage of the Schottky diodes, as established from the forward current-voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H-SiC platform for harsh environment applications.

Original language	English
Article number	252108
Journal	Applied Physics Letters
Volume	116
Issue number	25
DOIs	https://doi.org/10.1063/5.0007496
State	Published - Jun 22 2020

Funding

This research was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory (ORNL), managed by UT-Battelle, LLC for the U.S. Department of Energy under Contract No. DE-AC05-00OR22725. This manuscript was authored by UT-Battelle, LLC, under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy (DOE). This work is also partially supported by the DOE/National Nuclear Security Administration under Award No. DE-NA0003921. Neil R. Taylor is supported under an Integrated University Program Graduate Fellowship.

Funders	Funder number
U.S. Department of Energy	DE-AC05-00OR22725
National Nuclear Security Administration	DE-NA0003921
Oak Ridge National Laboratory
UT-Battelle

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title = "Thermal and radiation response of 4H-SiC Schottky diodes with direct-write electrical contacts",

abstract = "A high-sensitivity 4H-SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H-SiC Schottky diodes with direct-write printed silver contacts on the 5 μm-thick epilayer on 4H-SiC were characterized electrically in terms of the forward and reverse current-voltage and high-frequency capacitance-voltage characteristics. The turn-on voltage of the Schottky diodes, as established from the forward current-voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H-SiC platform for harsh environment applications.",

author = "Taylor, {Neil R.} and Yongchao Yu and Mihee Ji and Tolga Aytug and Shannon Mahurin and Richard Mayes and Sacit Cetiner and Paranthaman, {M. Parans} and Dianne Ezell and Cao, {Lei R.} and Joshi, {Pooran C.}",

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AU - Taylor, Neil R.

AU - Yu, Yongchao

AU - Ji, Mihee

AU - Aytug, Tolga

AU - Mahurin, Shannon

AU - Mayes, Richard

AU - Cetiner, Sacit

AU - Paranthaman, M. Parans

AU - Ezell, Dianne

AU - Cao, Lei R.

AU - Joshi, Pooran C.

PY - 2020/6/22

Y1 - 2020/6/22

N2 - A high-sensitivity 4H-SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H-SiC Schottky diodes with direct-write printed silver contacts on the 5 μm-thick epilayer on 4H-SiC were characterized electrically in terms of the forward and reverse current-voltage and high-frequency capacitance-voltage characteristics. The turn-on voltage of the Schottky diodes, as established from the forward current-voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H-SiC platform for harsh environment applications.

AB - A high-sensitivity 4H-SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H-SiC Schottky diodes with direct-write printed silver contacts on the 5 μm-thick epilayer on 4H-SiC were characterized electrically in terms of the forward and reverse current-voltage and high-frequency capacitance-voltage characteristics. The turn-on voltage of the Schottky diodes, as established from the forward current-voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H-SiC platform for harsh environment applications.

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Thermal and radiation response of 4H-SiC Schottky diodes with direct-write electrical contacts

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