Theory of the nucleation, growth, and structure of hydrogen-induced extended defects in silicon

F. A. Reboredo, M. Ferconi, S. T. Pantelides

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

Implantation and plasma indiffusion of H in crystalline Si are known to induce planar defects (platelets) whose structure has remained elusive. We report extensive first-principles calculations that reveal mechanisms for the nucleation and growth of aggregates of second-neighbor hydrogenated vacancies. These defects exhibit the key features associated with platelets, including a preference for (111) and (100) planes, H release, and trapping of H2 molecules.

Original languageEnglish
Pages (from-to)4870-4873
Number of pages4
JournalPhysical Review Letters
Volume82
Issue number24
DOIs
StatePublished - 1999
Externally publishedYes

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