Abstract
Implantation and plasma indiffusion of H in crystalline Si are known to induce planar defects (platelets) whose structure has remained elusive. We report extensive first-principles calculations that reveal mechanisms for the nucleation and growth of aggregates of second-neighbor hydrogenated vacancies. These defects exhibit the key features associated with platelets, including a preference for (111) and (100) planes, H release, and trapping of H2 molecules.
Original language | English |
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Pages (from-to) | 4870-4873 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 82 |
Issue number | 24 |
DOIs | |
State | Published - 1999 |
Externally published | Yes |