Theory of epsilon-near-zero modes in ultrathin films

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Abstract

The physics of the epsilon-near-zero (ENZ) mode, which is supported by a nanolayer at the frequency where the dielectric permittivity vanishes, has recently been a subject of debate. In this Rapid Communication, we thoroughly investigate and clarify the physics of this mode, providing its main characteristics and its domain of existence. This understanding will benefit all the applications that rely on ENZ modes in semiconductor nanolayers, including directional perfect absorption, voltage-tunable devices, and ultrafast thermal emission.

Original languageEnglish
Article number121408
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number12
DOIs
StatePublished - Mar 16 2015
Externally publishedYes

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