Theoretical insights into chirality-controlled SWCNT growth from a cycloparaphenylene template

Hai Bei Li, Alister J. Page, Stephan Irle, Keiji Morokuma

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

A self-assembly mechanism for low-temperature SWCNT growth from a [6]cycloparaphenylene ([6]CPP) precursor via ethynyl (C2H) radical addition is presented, based on non-equilibrium quantum chemical molecular dynamics (QM/MD) simulations and density functional theory (DFT) calculations. This mechanism, which maintains the (6,6) armchair chirality of a SWCNT fragment throughout the growth process, is energetically more favorable than a previously proposed Diels-Alder-based growth mechanisms [E. H. Fort, et al., J. Mater. Chem. 2011, 21, 1373]. QM/MD simulations and DFT calculations show that C2H radicals play dual roles during SWCNT growth, by abstracting hydrogen from the SWCNT fragment and providing the carbon source necessary for growth itself. Simulations demonstrate that chirality-controlled SWCNT growth from macrocyclic hydrocarbon seed molecules with pre-selected edge structure can be accomplished when the reaction conditions are carefully selected for hydrogen abstraction by radical species during the growth process. Exquisite control: A self-assembled, C2H-radical-mediated low-temperature SWCNT formation mechanism starting from an organic [6]CPP template is proposed based on nonequilibrium QM/MD simulations (see picture). This bottom-up organic approach may potentially yield chirality- and diameter-controlled SWCNT growth.

Original languageEnglish
Pages (from-to)1479-1485
Number of pages7
JournalChemPhysChem
Volume13
Issue number6
DOIs
StatePublished - Apr 23 2012
Externally publishedYes

Keywords

  • chirality
  • cycloparaphenylene
  • molecular dynamics
  • nanotubes
  • radicals

Fingerprint

Dive into the research topics of 'Theoretical insights into chirality-controlled SWCNT growth from a cycloparaphenylene template'. Together they form a unique fingerprint.

Cite this