The structure of sapphire implanted with nitrogen at room temperature and 1000 °C

C. McHargue; L. C. Ononye; L. F. Allard; E. Alves; M. F.Da Silva; J. C. Soares

doi:10.1016/S0168-583X(02)00623-7

The structure of sapphire implanted with nitrogen at room temperature and 1000 °C

C. McHargue, L. C. Ononye, L. F. Allard, E. Alves, M. F.Da Silva, J. C. Soares

Nuclear Energy Materials Microanalysis

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The structure of N-implanted sapphire (single crystal α-Al₂O₃) has beentudied using Rutherford backscattering-ion channeling spectroscopy (RBS-C), transmission electron microscopy (TEM) and optical absorption. Specimens having the c-axis normal to the optically polished surface were implanted with 3 × 10¹⁶ N/cm² (150 keV) at room temperature and 1000 °C. Little residual disorder was observed in the RBS-C spectra for the RT samples. A band of bubbles or voids (diameters 1-10 nm) extending from about 75 to 300 nm below the surface was observed in cross-sectioned TEM specimens. The disorder was greater in the 1000 °C sample and the TEM examination indicated the presence of extended defects lying parallel to the c-planes.

Original language	English
Pages (from-to)	629-632
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	191
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(02)00623-7
State	Published - May 2002

Funding

Research sponsored in part by US Department of Energy, Division of Materials Sciences and the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Transportation Technologies, as part of the High Temperature Materials Laboratory User Program at the Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy under contract number DE-AC05-00OR22725

Funders	Funder number
Division of Materials Sciences
Office of Transportation Technologies
U.S. Department of Energy
Office of Energy Efficiency and Renewable Energy
Oak Ridge National Laboratory	DE-AC05-00OR22725

Keywords

Optical absorption
RBS-C
Sapphire
TEM

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10.1016/S0168-583X(02)00623-7

Cite this

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title = "The structure of sapphire implanted with nitrogen at room temperature and 1000 °C",

abstract = "The structure of N-implanted sapphire (single crystal α-Al2O3) has beentudied using Rutherford backscattering-ion channeling spectroscopy (RBS-C), transmission electron microscopy (TEM) and optical absorption. Specimens having the c-axis normal to the optically polished surface were implanted with 3 × 1016 N/cm2 (150 keV) at room temperature and 1000 °C. Little residual disorder was observed in the RBS-C spectra for the RT samples. A band of bubbles or voids (diameters 1-10 nm) extending from about 75 to 300 nm below the surface was observed in cross-sectioned TEM specimens. The disorder was greater in the 1000 °C sample and the TEM examination indicated the presence of extended defects lying parallel to the c-planes.",

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AU - McHargue, C.

AU - Ononye, L. C.

AU - Allard, L. F.

AU - Alves, E.

AU - Silva, M. F.Da

AU - Soares, J. C.

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AB - The structure of N-implanted sapphire (single crystal α-Al2O3) has beentudied using Rutherford backscattering-ion channeling spectroscopy (RBS-C), transmission electron microscopy (TEM) and optical absorption. Specimens having the c-axis normal to the optically polished surface were implanted with 3 × 1016 N/cm2 (150 keV) at room temperature and 1000 °C. Little residual disorder was observed in the RBS-C spectra for the RT samples. A band of bubbles or voids (diameters 1-10 nm) extending from about 75 to 300 nm below the surface was observed in cross-sectioned TEM specimens. The disorder was greater in the 1000 °C sample and the TEM examination indicated the presence of extended defects lying parallel to the c-planes.

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The structure of sapphire implanted with nitrogen at room temperature and 1000 °C

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