Abstract
A technique has been developed whereby a thin layer (∼ 1 μm thick) can be removed, intact, from the surface of a single-crystal diamond. This process involves the creation of a sacrificial layer below the crystal's surface by ion implantation followed by selective etching of this sacrificial layer in order to free the overlying diamond plate. In combination with homoepitaxial growth of diamond films by chemical vapor deposition (CVD), this process presents the possibility of generating multiple single-crystal diamond wafers from one regenerative substrate. Such a method might make diamond a cost effective material for microelectronics applications. We have also combined this lift-off technique with a technique for patterning diamond with an excimer laser microbeam to produce free-standing diamond components with submillimeter dimensions. In this paper we discuss the lift-off technique and give some examples of its application to diamond micromachining.
| Original language | English |
|---|---|
| Pages (from-to) | 602-605 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 99 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - May 5 1995 |
Funding
* This work is supported by the Office of Basic Energy Sciences, US Department of Energy, under contract DE-ACOS-84OR21400 with Martin Marietta Energy Systems, Inc. and in part by an appointment to the Oak Ridge National Laboratory Postdoctoral Research Program administered by the Oak Ridge Institute for Science and Education. * Corresponding author. Tel. + 1 615 574 2480, e-mail [email protected].