The Seebeck coefficient and phonon drag in silicon

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    Abstract

    We present a theory of the phonon-drag Seebeck coefficient in nondegenerate semiconductors, and apply it to silicon for temperatures 30<T<300K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We find excellent agreement with the measurements of Geballe and Hull [Phys. Rev. 98, 940 (1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample.

    Original languageEnglish
    Article number245102
    JournalJournal of Applied Physics
    Volume116
    Issue number24
    DOIs
    StatePublished - Dec 28 2014

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