Abstract
We present a theory of the phonon-drag Seebeck coefficient in nondegenerate semiconductors, and apply it to silicon for temperatures 30<T<300K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We find excellent agreement with the measurements of Geballe and Hull [Phys. Rev. 98, 940 (1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample.
Original language | English |
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Article number | 245102 |
Journal | Journal of Applied Physics |
Volume | 116 |
Issue number | 24 |
DOIs | |
State | Published - Dec 28 2014 |