The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films

Engineering

• Silicon Surface 100%
• Step Flow 100%
• Thin Films 100%
• Ray Diffraction 50%
• Two Dimensional 50%
• Material System 50%
• Silicon Substrate 50%
• III-V Semiconductor 50%
• Gallium Arsenide 50%

Material Science

• Silicon 100%
• Surface (Surface Science) 100%
• Thin Films 100%
• X-Ray Diffraction 33%
• Gallium Arsenide 33%
• Transmission Electron Microscopy 33%
• Microscopy 33%
• III-V Semiconductor 33%