The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films

G. A. Devenyi; S. Y. Woo; S. Ghanad-Tavakoli; R. A. Hughes; R. N. Kleiman; G. A. Botton; J. S. Preston

doi:10.1063/1.3671022

The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films

G. A. Devenyi, S. Y. Woo, S. Ghanad-Tavakoli, R. A. Hughes, R. N. Kleiman, G. A. Botton, J. S. Preston

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25 Scopus citations

Abstract

We examine the role of vicinal surface steps in the formation and propagation of twins during the growth of epitaxial III-V thin films (GaAs, InP, GaSb, AlSb) on silicon substrates. This is achieved through the combined use of two-dimensional X-ray diffraction and conventional transmission electron microscopy techniques, which allow for both a macro and nano/micro characterization of the material systems. Observed is a systematic suppression of twins formed opposite to the tilt direction of vicinal substrates through a process of step-flow overgrowth of nucleated twins, and an enhancement of twins toward the tilt direction when the fastest growth planes are aligned with the step-flow. These results indicate a probable path to the enhancement of the electronic mobility of lateral devices based on III-V semiconductors on silicon.

Original language	English
Article number	124316
Journal	Journal of Applied Physics
Volume	110
Issue number	12
DOIs	https://doi.org/10.1063/1.3671022
State	Published - Dec 15 2011
Externally published	Yes

Funding

The authors thank Dr. B. J. Robinson for the experimental assistance with growth of the samples. G.A.B. thanks M. Aindow for helpful discussions regarding this paper. This work was supported by the Ontario Centres of Excellence and ARISE Technologies. Electron Microscopy work was carried out at the Canadian Centre for Electron Microscopy (CCEM), a facility supported by NSERC and McMaster University. X-ray work was carried out at the McMaster Analytical X-Ray Diffraction Facility (MAX), a facility supported by NSERC and McMaster University.

Funders	Funder number
Ontario Centres of Excellence
McMaster University
Natural Sciences and Engineering Research Council of Canada
Arisys Technologies

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AU - Preston, J. S.

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The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films

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