The Role of SnO2 Processing on Ionic Distribution in Double-Cation-Double Halide Perovskites

Holland Hysmith; So Yeon Park; Jonghee Yang; Anton V. Ievlev; Yongtao Liu; Kai Zhu; Bobby G. Sumpter; Joseph Berry; Mahshid Ahmadi; Olga S. Ovchinnikova

doi:10.1021/acsami.3c03520

The Role of SnO₂ Processing on Ionic Distribution in Double-Cation-Double Halide Perovskites

Holland Hysmith, So Yeon Park, Jonghee Yang, Anton V. Ievlev, Yongtao Liu, Kai Zhu, Bobby G. Sumpter, Joseph Berry, Mahshid Ahmadi, Olga S. Ovchinnikova

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Moving toward a future of efficient, accessible, and less carbon-reliant energy devices has been at the forefront of energy research innovations for the past 30 years. Metal-halide perovskite (MHP) thin films have gained significant attention due to their flexibility of device applications and tunable capabilities for improving power conversion efficiency. Serving as a gateway to optimize device performance, consideration must be given to chemical synthesis processing techniques. Therefore, how does common substrate processing techniques influence the behavior of MHP phenomena such as ion migration and strain? Here, we demonstrate how a hybrid approach of chemical bath deposition (CBD) and nanoparticle SnO₂ substrate processing significantly improves the performance of (FAPbI₃)_0.97(MAPbBr₃)_0.03 by reducing micro-strain in the SnO₂ lattice, allowing distribution of K⁺ from K-Cl treatment of substrates to passivate defects formed at the interface and produce higher current in light and dark environments. X-ray diffraction reveals differences in lattice strain behavior with respect to SnO₂ substrate processing methods. Through use of conductive atomic force microscopy (c-AFM), conductivity is measured spatially with MHP morphology, showing higher generation of current in both light and dark conditions for films with hybrid processing. Additionally, time-of-flight secondary ionization mass spectrometry (ToF-SIMS) observed the distribution of K⁺ at the perovskite/SnO₂ interface, indicating K⁺ passivation of defects to improve the power conversion efficiency (PCE) and device stability. We show how understanding the role of ion distribution at the SnO₂ and perovskite interface can help reduce the creating of defects and promote a more efficient MHP device.

Original language	English
Pages (from-to)	36856-36865
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	15
Issue number	30
DOIs	https://doi.org/10.1021/acsami.3c03520
State	Published - Aug 2 2023

Funding

This research was funded by the DOE Office of Science Research Program for Microelectronics Codesign (sponsored by ASCR, BES, HEP, NP, and FES) through the Abisko Project with program managers Robinson Pino (ASCR). Hal Finkel (ASCR), and Andrew Schwartz (BES) and was performed at the Center for Nanophase Materials Sciences (CNMS), a U.S. Department of Energy, Office of Science User Facility. M.A. was supported from the National Science Foundation (NSF), Award Number No. 2043205. ToF-SIMS characterization was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility, and using instrumentation within ORNL’s Materials Characterization Core provided by UT-Battelle, LLC under Contract No. DE-AC05-00OR22725 with the U.S. Department of Energy.

Keywords

conductive atomic force microscopy
metal-halide perovskite
time-of-flight secondary ionization mass spectrometry
tin oxide

Access to Document

10.1021/acsami.3c03520

Cite this

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title = "The Role of SnO2 Processing on Ionic Distribution in Double-Cation-Double Halide Perovskites",

abstract = "Moving toward a future of efficient, accessible, and less carbon-reliant energy devices has been at the forefront of energy research innovations for the past 30 years. Metal-halide perovskite (MHP) thin films have gained significant attention due to their flexibility of device applications and tunable capabilities for improving power conversion efficiency. Serving as a gateway to optimize device performance, consideration must be given to chemical synthesis processing techniques. Therefore, how does common substrate processing techniques influence the behavior of MHP phenomena such as ion migration and strain? Here, we demonstrate how a hybrid approach of chemical bath deposition (CBD) and nanoparticle SnO2 substrate processing significantly improves the performance of (FAPbI3)0.97(MAPbBr3)0.03 by reducing micro-strain in the SnO2 lattice, allowing distribution of K+ from K-Cl treatment of substrates to passivate defects formed at the interface and produce higher current in light and dark environments. X-ray diffraction reveals differences in lattice strain behavior with respect to SnO2 substrate processing methods. Through use of conductive atomic force microscopy (c-AFM), conductivity is measured spatially with MHP morphology, showing higher generation of current in both light and dark conditions for films with hybrid processing. Additionally, time-of-flight secondary ionization mass spectrometry (ToF-SIMS) observed the distribution of K+ at the perovskite/SnO2 interface, indicating K+ passivation of defects to improve the power conversion efficiency (PCE) and device stability. We show how understanding the role of ion distribution at the SnO2 and perovskite interface can help reduce the creating of defects and promote a more efficient MHP device.",

keywords = "conductive atomic force microscopy, metal-halide perovskite, time-of-flight secondary ionization mass spectrometry, tin oxide",

author = "Holland Hysmith and Park, {So Yeon} and Jonghee Yang and Ievlev, {Anton V.} and Yongtao Liu and Kai Zhu and Sumpter, {Bobby G.} and Joseph Berry and Mahshid Ahmadi and Ovchinnikova, {Olga S.}",

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AU - Hysmith, Holland

AU - Park, So Yeon

AU - Yang, Jonghee

AU - Ievlev, Anton V.

AU - Liu, Yongtao

AU - Zhu, Kai

AU - Sumpter, Bobby G.

AU - Berry, Joseph

AU - Ahmadi, Mahshid

AU - Ovchinnikova, Olga S.

PY - 2023/8/2

Y1 - 2023/8/2

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