The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers

B. Mitchell, J. Poplawsky, D. Lee, A. Koizumi, Y. Fujiwara, V. Dierolf

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

The nature of Eu incorporation and resulting luminescence efficiency in GaN has been extensively investigated. By performing a comparative study on GaN:Eu samples grown under a variety of controlled conditions, and using a variety of experimental techniques, the configuration of the majority site has been concluded to contain a nitrogen vacancy (VN). The nitrogen vacancy can appear in two symmetries, which has a profound impact on the luminescence and magnetic properties of the sample. The structure of the minority site has also been identified. We propose that, for both sites, the excitation efficiency of the red Eu emission is improved by the presence of donor-acceptor pairs in the close vicinity of the Eu.

Original languageEnglish
Article number204501
JournalJournal of Applied Physics
Volume115
Issue number20
DOIs
StatePublished - May 28 2014
Externally publishedYes

Funding

FundersFunder number
Japan Society for the Promotion of Science9GS1209
National Science FoundationECCS-1140038
Japan Society for the Promotion of Science26820113, 24226009

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