Abstract
Pulse thermal processing (PTP) has the capability of processing thin-films and nanoparticles over broad areas utilizing high-density infrared plasma arc lamp technology. Heating rates reaching 600,000° C/s, which is orders of magnitude larger than current state-of-the-art rapid thermal annealing systems, are possible that allow controlled diffusion on the nanoscale. The ability to control heating at these levels permits processing thin-films and nanoparticles on temperature-sensitive substrates such as polymers. The PTP technique has been used to crystallize sputtered amorphous silicon thin-films on sapphire substrates.
Original language | English |
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Pages (from-to) | 45-47 |
Number of pages | 3 |
Journal | JOM |
Volume | 56 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2004 |
Funding
This research was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC for the U.S. Department of Energy under Contract No. DE-AC05-00OR22725.