The pulse thermal processing of nanocrystalline silicon thin-films

R. D. Ott, P. Kadolkar, C. A. Blue, A. C. Cole, G. B. Thompson

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Pulse thermal processing (PTP) has the capability of processing thin-films and nanoparticles over broad areas utilizing high-density infrared plasma arc lamp technology. Heating rates reaching 600,000° C/s, which is orders of magnitude larger than current state-of-the-art rapid thermal annealing systems, are possible that allow controlled diffusion on the nanoscale. The ability to control heating at these levels permits processing thin-films and nanoparticles on temperature-sensitive substrates such as polymers. The PTP technique has been used to crystallize sputtered amorphous silicon thin-films on sapphire substrates.

Original languageEnglish
Pages (from-to)45-47
Number of pages3
JournalJOM
Volume56
Issue number10
DOIs
StatePublished - Oct 2004

Funding

This research was sponsored by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC for the U.S. Department of Energy under Contract No. DE-AC05-00OR22725.

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