Abstract
In the framework of the PixFEL project, a processing channel for pixel sensor readout has been designed and fabricated in a 65 nm CMOS technology. The detector under development is aimed at applications to coherent X-ray diffraction imaging (CXDI) at the next generation free electron lasers (FELs). Especially in the detector region around the hole for the unscattered photon beam, pixels will be subjected to huge doses of ionizing radiation, in the order of tens of Grad(SiO 2 , during their lifetime. The total ionizing dose (TID) for the frontend electronics, while significantly reduced by the shielding effect of the detector, is still expected to exceed one Grad(SiO 2 . This paper investigates the performance degradation in the PixFEL readout circuit, in particular in the charge sensitive amplifier, after exposure to X-ray doses up to 100 Mrad(SiO 2 .
Original language | English |
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Title of host publication | 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2017 - Conference Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781538622827 |
DOIs | |
State | Published - Nov 12 2018 |
Event | 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2017 - Atlanta, United States Duration: Oct 21 2017 → Oct 28 2017 |
Publication series
Name | 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2017 - Conference Proceedings |
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Conference
Conference | 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2017 |
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Country/Territory | United States |
City | Atlanta |
Period | 10/21/17 → 10/28/17 |
Funding
ACKNOWLEDGMENT The research activity presented in this paper has been carried out in the framework of the PixFEL experiment funded by the Italian Institute for Nuclear Physics (INFN). The authors wish to thank Serena Mattiazzo, Devis Pantano and Mario Tessaro for making the X-ray sources available and for assisting during the irradiation procedure.