The microstructure of high dose oxygen implanted Si and its dependence on implantation conditions

O. W. Holland; D. Fathy; T. P. Sjoreen; J. Narayan; K. More

doi:10.1117/12.946494

The microstructure of high dose oxygen implanted Si and its dependence on implantation conditions

O. W. Holland
, D. Fathy
, T. P. Sjoreen
, J. Narayan
, K. More

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The formation of a buried dielectric in single crystals of silicon by high dose implantation of oxygen ions is investigated. The dependence of the microstructure on implantation conditions is determined. It will be shown that the microstructure can be tailored by changing the implant conditions to optimize its suitability for the silicon-on-insulator technology. Mechanisms responsible for the formation of the microstructure and the influence of implantation conditions will be discussed.

Original language	English
Pages (from-to)	255-261
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	530
DOIs	https://doi.org/10.1117/12.946494
State	Published - Apr 9 1985
Externally published	Yes

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title = "The microstructure of high dose oxygen implanted Si and its dependence on implantation conditions",

abstract = "The formation of a buried dielectric in single crystals of silicon by high dose implantation of oxygen ions is investigated. The dependence of the microstructure on implantation conditions is determined. It will be shown that the microstructure can be tailored by changing the implant conditions to optimize its suitability for the silicon-on-insulator technology. Mechanisms responsible for the formation of the microstructure and the influence of implantation conditions will be discussed.",

author = "Holland, \{O. W.\} and D. Fathy and Sjoreen, \{T. P.\} and J. Narayan and K. More",

year = "1985",

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language = "English",

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T1 - The microstructure of high dose oxygen implanted Si and its dependence on implantation conditions

AU - Holland, O. W.

AU - Fathy, D.

AU - Sjoreen, T. P.

AU - Narayan, J.

AU - More, K.

PY - 1985/4/9

Y1 - 1985/4/9

N2 - The formation of a buried dielectric in single crystals of silicon by high dose implantation of oxygen ions is investigated. The dependence of the microstructure on implantation conditions is determined. It will be shown that the microstructure can be tailored by changing the implant conditions to optimize its suitability for the silicon-on-insulator technology. Mechanisms responsible for the formation of the microstructure and the influence of implantation conditions will be discussed.

AB - The formation of a buried dielectric in single crystals of silicon by high dose implantation of oxygen ions is investigated. The dependence of the microstructure on implantation conditions is determined. It will be shown that the microstructure can be tailored by changing the implant conditions to optimize its suitability for the silicon-on-insulator technology. Mechanisms responsible for the formation of the microstructure and the influence of implantation conditions will be discussed.

UR - https://www.scopus.com/pages/publications/0021901637

U2 - 10.1117/12.946494

DO - 10.1117/12.946494

M3 - Article

AN - SCOPUS:0021901637

SN - 0277-786X

VL - 530

SP - 255

EP - 261

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

The microstructure of high dose oxygen implanted Si and its dependence on implantation conditions

Abstract

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