The growth of YBCO films with high critical current at reduced pressures using the BaF2 ex situ process

J. Yoo, K. J. Leonard, H. S. Hsu, L. Heatherly, F. A. List, D. F. Lee, A. A. Gapud, P. M. Martin, S. Cook, M. Paranthaman, A. Goyal, D. M. Kroeger

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The growth of 0.9-1.0 μm thick YBa2Cu3O 7-δ (YBCO) films on biaxially textured Ni-3 at.% W (NiW) substrates using the BaF2 ex situ process was investigated at reduced pressures. By varying the water vapour pressure (PH2O), Y-BaF 2-Cu-O (YBFCO) precursor films deposited by e-beam co-evaporation were converted at a reduced total pressure (Ptotal) of 50-55 Torr and conversion temperature (TS) of 740°C for a wet conversion time (tW) of 60 min. Critical current density (JC) values greater than 1 MA cm-2 for the thick YBCO films were obtained under the condition of varying PH2O from low pressure to 10 Torr. The transition temperatures (TC) of the samples were over 90 K with ΔTC = 1.8-2.5 K. Pre-heat treatment of the precursor films on CeO2/YSZ/Y2O3/Ni/NiW substrates under an O 2 atmosphere condition before the conversion resulted in smooth surfaces without large secondary phase particles embedded in the films.

Original languageEnglish
Pages (from-to)1209-1214
Number of pages6
JournalSuperconductor Science and Technology
Volume17
Issue number10
DOIs
StatePublished - Oct 2004

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