The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films

Huiying Hao; Jie Xing; Weimin Li; Xiangbo Zeng; Guanglin Kong; Xianbo Liao

The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films

Huiying Hao, Jie Xing, Weimin Li, Xiangbo Zeng, Guanglin Kong, Xianbo Liao

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A series of diphasic nanocrystalline silicon thin films was prepared by PECVD technique. The effects of substrate temperature on the properties of the films were investigated. The results show that crystalline volume fraction and grain size in the films increase with increasing T_s. The improved structures lead to higher mobility lifetime product and better stability. While the photosensitivity decreases due to the formation of a conductive percolation channel or the shift of Femi-level in the diphasic films. In our case, the diphasic nanocrystalline silicon thin film deposited at 200 °C can gain both the fine photoelectrical properties and high stability.

Original language	English
Pages (from-to)	112-115
Number of pages	4
Journal	Optoelectronics and Advanced Materials, Rapid Communications
Volume	5
Issue number	2
State	Published - 2011
Externally published	Yes

Keywords

Nanocrystalline silicon thin films
Photoelectrical properties
Stability
Structure

Cite this

@article{a36aa6134ef4455c9ad3b77ce794753f,

title = "The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films",

abstract = "A series of diphasic nanocrystalline silicon thin films was prepared by PECVD technique. The effects of substrate temperature on the properties of the films were investigated. The results show that crystalline volume fraction and grain size in the films increase with increasing Ts. The improved structures lead to higher mobility lifetime product and better stability. While the photosensitivity decreases due to the formation of a conductive percolation channel or the shift of Femi-level in the diphasic films. In our case, the diphasic nanocrystalline silicon thin film deposited at 200 °C can gain both the fine photoelectrical properties and high stability.",

keywords = "Nanocrystalline silicon thin films, Photoelectrical properties, Stability, Structure",

author = "Huiying Hao and Jie Xing and Weimin Li and Xiangbo Zeng and Guanglin Kong and Xianbo Liao",

year = "2011",

language = "English",

volume = "5",

pages = "112--115",

journal = "Optoelectronics and Advanced Materials, Rapid Communications",

issn = "1842-6573",

number = "2",

}

TY - JOUR

T1 - The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films

AU - Hao, Huiying

AU - Xing, Jie

AU - Li, Weimin

AU - Zeng, Xiangbo

AU - Kong, Guanglin

AU - Liao, Xianbo

PY - 2011

Y1 - 2011

N2 - A series of diphasic nanocrystalline silicon thin films was prepared by PECVD technique. The effects of substrate temperature on the properties of the films were investigated. The results show that crystalline volume fraction and grain size in the films increase with increasing Ts. The improved structures lead to higher mobility lifetime product and better stability. While the photosensitivity decreases due to the formation of a conductive percolation channel or the shift of Femi-level in the diphasic films. In our case, the diphasic nanocrystalline silicon thin film deposited at 200 °C can gain both the fine photoelectrical properties and high stability.

AB - A series of diphasic nanocrystalline silicon thin films was prepared by PECVD technique. The effects of substrate temperature on the properties of the films were investigated. The results show that crystalline volume fraction and grain size in the films increase with increasing Ts. The improved structures lead to higher mobility lifetime product and better stability. While the photosensitivity decreases due to the formation of a conductive percolation channel or the shift of Femi-level in the diphasic films. In our case, the diphasic nanocrystalline silicon thin film deposited at 200 °C can gain both the fine photoelectrical properties and high stability.

KW - Nanocrystalline silicon thin films

KW - Photoelectrical properties

KW - Stability

KW - Structure

UR - http://www.scopus.com/inward/record.url?scp=79951828024&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:79951828024

SN - 1842-6573

VL - 5

SP - 112

EP - 115

JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

IS - 2

ER -

The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films

Abstract

Keywords

Other files and links

Fingerprint

Cite this