The effects of chemical etching on the charge collection efficiency of {111} oriented Cd0.9Zn0.1Te nuclear radiation detectors

G. Wright; Y. Cui; U. N. Roy; C. Barnett; K. Reed; A. Burger; F. Lu; L. Li; R. B. James

doi:10.1109/TNS.2002.803852

The effects of chemical etching on the charge collection efficiency of {111} oriented Cd_0.9Zn_0.1Te nuclear radiation detectors

G. Wright, Y. Cui, U. N. Roy, C. Barnett, K. Reed, A. Burger, F. Lu, L. Li, R. B. James

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

In this paper, we report the effects of different etchants on the mobility-lifetime product (μτ) of cadmium zinc telluride (CZT). The μτ values were obtained via Hecht relation. The effects of surface recombination were also investigated using photoconductivity measurements. Results were obtained for a {111} oriented CZT single crystal. We find that the surfaces behave differently after etching. Values for surface recombination rates for (111)A and (111)B surfaces can vary by up to two orders of magnitudes for the same etchant. This large variation in surface recombination rates affects the charge collection efficiency and detector performance. We report surface treatments that enhance the charge collection efficiency for (111)A and (111)B surfaces. Data describing the detector response for Am²⁴¹ Spectra current-voltage relationship, and bulk μτ values and surface recombination rates are shown for different etchants.

Original language	English
Pages (from-to)	2521-2525
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	49 II
Issue number	5
DOIs	https://doi.org/10.1109/TNS.2002.803852
State	Published - Oct 2002
Externally published	Yes

Funding

Manuscript received November 24, 2001; revised March 19, 2002. This work was supported by NASA through the Fisk Center for Photonic Materials and Devices, Grants NCC8-133, NCC8-145, and NCC5-286, and by the DOE through the Office of Nuclear Nonproliferation (NA-22) and Initiatives on Proliferation Prevention. G. Wright, Y. Cui, U. N. Roy, C. Barnett, K. Reed, and A. Burger are with the Center for Photonic Materials and Devices, Fisk University, Nashville TN 37208, USA (e-mail [email protected]). F. Lu and L. Li are with Yinnel Tech, South Bend, IN 46619 USA. R. B. James is with Brookhaven National Laboratory, Upton, NY 11973 USA. Digital Object Identifier 10.1109/TNS.2002.803852

Funders	Funder number
Fisk Center for Photonic Materials and Devices	NCC8-133, NCC8-145, NCC5-286
U.S. Department of Energy
National Aeronautics and Space Administration
Office of Defense Nuclear Nonproliferation	NA-22

Keywords

CZT
Charge collection
Nuclear radiation detectors
Surface recombination

Access to Document

10.1109/TNS.2002.803852

Cite this

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title = "The effects of chemical etching on the charge collection efficiency of {111} oriented Cd0.9Zn0.1Te nuclear radiation detectors",

abstract = "In this paper, we report the effects of different etchants on the mobility-lifetime product (μτ) of cadmium zinc telluride (CZT). The μτ values were obtained via Hecht relation. The effects of surface recombination were also investigated using photoconductivity measurements. Results were obtained for a {111} oriented CZT single crystal. We find that the surfaces behave differently after etching. Values for surface recombination rates for (111)A and (111)B surfaces can vary by up to two orders of magnitudes for the same etchant. This large variation in surface recombination rates affects the charge collection efficiency and detector performance. We report surface treatments that enhance the charge collection efficiency for (111)A and (111)B surfaces. Data describing the detector response for Am241 Spectra current-voltage relationship, and bulk μτ values and surface recombination rates are shown for different etchants.",

keywords = "CZT, Charge collection, Nuclear radiation detectors, Surface recombination",

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AU - Wright, G.

AU - Cui, Y.

AU - Roy, U. N.

AU - Barnett, C.

AU - Reed, K.

AU - Burger, A.

AU - Lu, F.

AU - Li, L.

AU - James, R. B.

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AB - In this paper, we report the effects of different etchants on the mobility-lifetime product (μτ) of cadmium zinc telluride (CZT). The μτ values were obtained via Hecht relation. The effects of surface recombination were also investigated using photoconductivity measurements. Results were obtained for a {111} oriented CZT single crystal. We find that the surfaces behave differently after etching. Values for surface recombination rates for (111)A and (111)B surfaces can vary by up to two orders of magnitudes for the same etchant. This large variation in surface recombination rates affects the charge collection efficiency and detector performance. We report surface treatments that enhance the charge collection efficiency for (111)A and (111)B surfaces. Data describing the detector response for Am241 Spectra current-voltage relationship, and bulk μτ values and surface recombination rates are shown for different etchants.

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