The effect of temperature on the structure of iron-implanted sapphire

C. J. McHargue; L. C. Ononye; E. Alves; C. Marques; L. F. Allard

doi:10.1016/j.nimb.2003.12.089

The effect of temperature on the structure of iron-implanted sapphire

C. J. McHargue, L. C. Ononye, E. Alves, C. Marques, L. F. Allard

Nuclear Energy Materials Microanalysis

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

The defect structures of sapphire (α-Al₂O₃) implanted with iron at room temperature and 1000 °C were determined by Rutherford backscattering spectroscopy/ion channelling and transmission electron microscopy. Crystals with the c-axis normal to the surface were implanted with 1×10¹⁷ Fe/cm² (150 keV). Samples implanted at RT were then annealed at 1000 °C in a reducing atmosphere. Implantation at RT produced precipitates, identified as α-Fe, 1-3 nm in size and the typical "black spot" damage. Implantation at 1000 °C produced little residual disorder and a microstructure containing faceted iron precipitates ranging in size to 100 nm. Voids were associated with many of the precipitates. A second population of voids in the size range of 5-15 nm was also present. Annealing produced a microstructure containing 1-60 nm faceted precipitates but fewer voids.

Original language	English
Pages (from-to)	227-231
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	218
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2003.12.089
State	Published - Jun 2004
Event	Proceedings of the Twelfth International Conference on Radiation - Gramado, Brazil Duration: Aug 31 2003 → Sep 5 2003

Funding

Research sponsored in part by US Department of Energy, Division of Materials Sciences, and the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Transportation Technologies, as part of the High Temperature Materials Laboratory User Program at the Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy under contract number DE-AC05-00OR22725.

Keywords

Nanoclusters
RBS-C
Sapphire
TEM

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10.1016/j.nimb.2003.12.089

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title = "The effect of temperature on the structure of iron-implanted sapphire",

abstract = "The defect structures of sapphire (α-Al2O3) implanted with iron at room temperature and 1000 °C were determined by Rutherford backscattering spectroscopy/ion channelling and transmission electron microscopy. Crystals with the c-axis normal to the surface were implanted with 1×1017 Fe/cm2 (150 keV). Samples implanted at RT were then annealed at 1000 °C in a reducing atmosphere. Implantation at RT produced precipitates, identified as α-Fe, 1-3 nm in size and the typical {"}black spot{"} damage. Implantation at 1000 °C produced little residual disorder and a microstructure containing faceted iron precipitates ranging in size to 100 nm. Voids were associated with many of the precipitates. A second population of voids in the size range of 5-15 nm was also present. Annealing produced a microstructure containing 1-60 nm faceted precipitates but fewer voids.",

keywords = "Nanoclusters, RBS-C, Sapphire, TEM",

author = "McHargue, {C. J.} and Ononye, {L. C.} and E. Alves and C. Marques and Allard, {L. F.}",

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AU - McHargue, C. J.

AU - Ononye, L. C.

AU - Alves, E.

AU - Marques, C.

AU - Allard, L. F.

PY - 2004/6

Y1 - 2004/6

N2 - The defect structures of sapphire (α-Al2O3) implanted with iron at room temperature and 1000 °C were determined by Rutherford backscattering spectroscopy/ion channelling and transmission electron microscopy. Crystals with the c-axis normal to the surface were implanted with 1×1017 Fe/cm2 (150 keV). Samples implanted at RT were then annealed at 1000 °C in a reducing atmosphere. Implantation at RT produced precipitates, identified as α-Fe, 1-3 nm in size and the typical "black spot" damage. Implantation at 1000 °C produced little residual disorder and a microstructure containing faceted iron precipitates ranging in size to 100 nm. Voids were associated with many of the precipitates. A second population of voids in the size range of 5-15 nm was also present. Annealing produced a microstructure containing 1-60 nm faceted precipitates but fewer voids.

AB - The defect structures of sapphire (α-Al2O3) implanted with iron at room temperature and 1000 °C were determined by Rutherford backscattering spectroscopy/ion channelling and transmission electron microscopy. Crystals with the c-axis normal to the surface were implanted with 1×1017 Fe/cm2 (150 keV). Samples implanted at RT were then annealed at 1000 °C in a reducing atmosphere. Implantation at RT produced precipitates, identified as α-Fe, 1-3 nm in size and the typical "black spot" damage. Implantation at 1000 °C produced little residual disorder and a microstructure containing faceted iron precipitates ranging in size to 100 nm. Voids were associated with many of the precipitates. A second population of voids in the size range of 5-15 nm was also present. Annealing produced a microstructure containing 1-60 nm faceted precipitates but fewer voids.

KW - Nanoclusters

KW - RBS-C

KW - Sapphire

KW - TEM

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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T2 - Proceedings of the Twelfth International Conference on Radiation

Y2 - 31 August 2003 through 5 September 2003

ER -

The effect of temperature on the structure of iron-implanted sapphire

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